生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.12 | 标称电路换相断开时间: | 15 µs |
关态电压最小值的临界上升速率: | 100 V/us | 最大直流栅极触发电流: | 300 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 1000 mA |
最大漏电流: | 100 mA | 通态非重复峰值电流: | 17000 A |
最大通态电压: | 2.18 V | 最大通态电流: | 1510000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
断态重复峰值电压: | 200 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
R350CH02FJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2496A I(T)RMS, 1510000mA I(T), 200V V(DRM), 200V V(RRM), 1 E |
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R350CH02FJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1510000mA I(T), 200V V(DRM) |
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R350CH02FJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1902.84A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
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R350CH02FK0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1510000mA I(T), 200V V(DRM) |
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R350CH02FKO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1902.84A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
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R350CH02FL0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1510000mA I(T), 200V V(DRM), |
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R350CH04CJ6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2496A I(T)RMS, 400V V(DRM), 240V V(RRM), 1 Element |
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R350CH04CJ8 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2496A I(T)RMS, 400V V(DRM), 320V V(RRM), 1 Element |
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R350CH04CJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1902.84A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element |
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R350CH04CK0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),1.51KA I(T),TO-200A |
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