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R325CH14CG7 PDF预览

R325CH14CG7

更新时间： 2024-11-24 08:19:27
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IXYS /
页数 文件大小 规格书
12页 282K
描述
Silicon Controlled Rectifier, 2398A I(T)RMS, 892000mA I(T), 1400V V(DRM), 980V V(RRM), 1 Element,

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R325CH14CG7 数据手册

 浏览型号R325CH14CG7的Datasheet PDF文件第2页浏览型号R325CH14CG7的Datasheet PDF文件第3页浏览型号R325CH14CG7的Datasheet PDF文件第4页浏览型号R325CH14CG7的Datasheet PDF文件第5页浏览型号R325CH14CG7的Datasheet PDF文件第6页浏览型号R325CH14CG7的Datasheet PDF文件第7页 
Date:- 21 Dec, 2000  
Data Sheet Issue:- 1  
WESTCODE  
Distributed Gate Thyristor  
Types R325CH02 to R325CH14  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
200-1400  
V
V
V
V
200-1400  
200-1400  
300-1500  
MAXIMUM  
LIMITS  
1178  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
A
767  
433  
A
2395  
892  
A
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
17  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
≤
18.7  
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
1.45×106  
1.75×106  
1000  
1500  
5
I2t  
≤
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
diT/dt  
VRGM  
PG(AV)  
PGM  
VGD  
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
V
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
≤
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types R325CH02 to R325CH14 Issue 1  
Page 1 of 12  
December, 2000  
1234567...12

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