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R270CH08FL4 PDF预览

R270CH08FL4

更新时间: 2024-10-28 19:57:19
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
5页 272K
描述
Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 320V V(RRM), 1 Element, TO-200AC

R270CH08FL4 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:FAST标称电路换相断开时间:15 µs
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:300 mA最大直流栅极触发电压:3 V
JEDEC-95代码:TO-200ACJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:2000 A重复峰值关态漏电流最大值:70000 µA
断态重复峰值电压:800 V重复峰值反向电压:320 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

R270CH08FL4 数据手册

 浏览型号R270CH08FL4的Datasheet PDF文件第2页浏览型号R270CH08FL4的Datasheet PDF文件第3页浏览型号R270CH08FL4的Datasheet PDF文件第4页浏览型号R270CH08FL4的Datasheet PDF文件第5页 

与R270CH08FL4相关器件

型号 品牌 获取价格 描述 数据表
R270CH08FL5 IXYS

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Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 400V V(RRM), 1 Element, TO-200AC
R270CH08FL6 IXYS

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Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 480V V(RRM), 1 Element, TO-200AC
R270CH08FL7 IXYS

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Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 560V V(RRM), 1 Element, TO-200AC
R270CH08FL8 IXYS

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Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 640V V(RRM), 1 Element, TO-200AC
R270CH08FL9 IXYS

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Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 720V V(RRM), 1 Element, TO-200AC
R270CH08FLO IXYS

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Silicon Controlled Rectifier, 1554.3A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200
R270CH08FM IXYS

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Silicon Controlled Rectifier, 2000 A, 800 V, SCR
R270CH08FM0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,800V V(DRM),1.63KA I(T),TO-200A
R270CH08FM3 IXYS

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Silicon Controlled Rectifier, 2000 A, 800 V, SCR, TO-200AC
R270CH08FM4 IXYS

获取价格

Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 320V V(RRM), 1 Element, TO-200AC