PHOTOMULTIPLIER TUBE
R2496
For Positron CT Scanner Using BaF2 Scintillator
10mm (3/8 Inch) Diameter, 8-Stage, Head-On, Bialkali Photocathode
FEATURES
Coincidence Resolving Time
with BaF2-BaF2/22Na ........................................................................................................................................................... 0.45ns
Fast Time Response
Transit Time Spread (FWHM) .............................................................................................................................................. 0.6ns
Quantum Efficiency at 225nm ................................................................................................................................................... 18%
GENERAL
Parameter
Description/Value
Unit
nm
nm
—
mm dia.
—
Spectral Response
Wavelength of Maximum Response
160 to 650
420
Bialkali
8
Fused silica
Linear focused
8
Material
Minimum Useful Area
Photocathode
Window Material
Dynode
—
—
pF
pF
—
g
—
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
Direct Interelectrode
Capacitances
Base
Weight
Suitable Socket
0.7
2.0
11-pin glass base
Approx. 5
E678-11N (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
1500
0.03
Unit
Vdc
mA
°C
Supply Voltage
Between Anode and Cathode
Average Anode Current
Ambient Temperature
-80 to +50
CHARACTERISTICS (at 25°C)
Parameter
Min.
60
—
—
30
—
—
—
—
—
Typ.
95
76
9.5
100
8.0 × 104
1.1 × 106
2
Max.
—
—
—
—
—
—
50
—
—
Unit
µA/lm
mA/W
µA/lm-b
A/lm
A/W
—
Luminous (2856K)
Cathode Sensitivity
Radiant at 420nm
Blue
Luminous (2856K)
Radiant at 420nm
Anode Sensitivity
Gain
Anode Dark Current (after 30 min. storage in darkness)
nA
ns
ns
Anode Pulse Rise Time
Electron Transit Time
0.7
9.0
Time Response
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Distribution Ratio
Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8
P
3
1.5 1.5 1
1
1
1
1
1
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1998 Hamamatsu Photonics K.K.
©