PHOTOMULTIPLIER TUBE
R2496
Fast Time Response
10 mm (3/8 Inch) Diameter, 8-stage, Head-on, Bialkali Photocathode
FEATURES
GCoincident Resolving Time
with BaF2-BaF2/22Na ........................................... 0.45 ns
GFast Time Response
Transit Time Spread (FWHM) ............................ 0.6 ns
GQuantum Efficiency at 225 nm .............................. 18 %
GENERAL
Parameter
Description / Value
Unit
nm
nm
—
mm
—
Spectral Response
Wavelength of Maximum Response
160 to 650
420
Bialkali
MateriaI
Minimum Effective Area
Photocathode
8
Window Material
Dynode
Fused silica
Linear focused
8
Structure
—
—
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
Direct Interelectrode
Capacitances
Base
Operating Ambient Temperature
Storage Temperature
Weight
0.7
2.0
pF
pF
—
°C
°C
g
11-pin glass base
-30 to +50
-80 to +50
Approx. 5
E678-11N (supplied)
Suitable Socket
—
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
1500
0.03
Unit
V
mA
Supply Voltage
Between Anode and Cathode
Average Anode Current
CHARACTERISTICS (at 25 °C)
Parameter
Min.
60
—
—
30
—
—
—
—
Typ.
100
80
10.0
100
8.0 × 104
1.0 × 106
2
Max.
—
—
—
—
—
—
50
—
Unit
µA/lm
mA/W
—
A/lm
A/W
—
Luminous (2856 K)
Cathode Sensitivity
Radiant at 420 nm
Blue Sensitivity Index (CS 5-58)
Luminous (2856 K)
Radiant at 420 nm
Anode Sensitivity
Gain
Anode Dark Current (After 30 minute storage in darkness)
Anode Pulse Rise Time
nA
ns
0.7
Time Response
Electron Transit Time
—
9.0
—
ns
Transit Time Spread (FWHM)
—
0.6
—
ns
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8
P
Distribution Ratio
3
1.5 1.5 1
1
1
1
1
1
Supply Voltage: 1250 Vdc, K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.