5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| R220CH12DK6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1200V V(DRM), 720V V(RRM), 1 Element, TO-200A |
|
| R220CH12DK7 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950 A, 1200 V, SCR, TO-200AC |
|
| R220CH12DK8 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1200V V(DRM), 960V V(RRM), 1 Element, TO-200A |
|
| R220CH12DKO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1505.63A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO- |
|
| R220CH12DL0 | LITTELFUSE |
获取价格 |
Silicon Controlled Rectifier, 1135000mA I(T), 1200V V(DRM), |
|
| R220CH12DLO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1505.63A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element |
|
| R220CH12EH3 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1200V V(DRM), 360V V(RRM), 1 Element, TO-200A |
|
| R220CH12EH5 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200A |
|
| R220CH12EH6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1200V V(DRM), 720V V(RRM), 1 Element, TO-200A |
|
| R220CH12EH9 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950 A, 1200 V, SCR, TO-200AC |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
