5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| R220CH10CL0 | LITTELFUSE |
获取价格 |
Silicon Controlled Rectifier, 1135000mA I(T), 1000V V(DRM), |
|
| R220CH10DH4 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1000V V(DRM), 400V V(RRM), 1 Element, TO-200A |
|
| R220CH10DH5 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1000V V(DRM), 500V V(RRM), 1 Element, TO-200A |
|
| R220CH10DH6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1000V V(DRM), 600V V(RRM), 1 Element, TO-200A |
|
| R220CH10DH8 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1000V V(DRM), 800V V(RRM), 1 Element, TO-200A |
|
| R220CH10DH9 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950 A, 1000 V, SCR, TO-200AC |
|
| R220CH10DJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),1.135KA I(T),TO-200A |
|
| R220CH10DJ4 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1000V V(DRM), 400V V(RRM), 1 Element, TO-200A |
|
| R220CH10DJ5 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950 A, 1000 V, SCR, TO-200AC |
|
| R220CH10DJ6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1950A I(T)RMS, 1000V V(DRM), 600V V(RRM), 1 Element, TO-200A |
|
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
意法半导体发布第四代SiC技术，助力电动汽车电驱
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
