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R1LV0108ESF-7SRB0 PDF预览

R1LV0108ESF-7SRB0

更新时间: 2024-11-09 09:48:11
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
17页 121K
描述
1Mb Advanced LPSRAM (128k word x 8bit)

R1LV0108ESF-7SRB0 数据手册

 浏览型号R1LV0108ESF-7SRB0的Datasheet PDF文件第2页浏览型号R1LV0108ESF-7SRB0的Datasheet PDF文件第3页浏览型号R1LV0108ESF-7SRB0的Datasheet PDF文件第4页浏览型号R1LV0108ESF-7SRB0的Datasheet PDF文件第5页浏览型号R1LV0108ESF-7SRB0的Datasheet PDF文件第6页浏览型号R1LV0108ESF-7SRB0的Datasheet PDF文件第7页 
R1LV0108E Series  
1Mb Advanced LPSRAM (128k word x 8bit)  
R10DS0049EJ0200  
Rev.2.00  
2011.01.14  
Description  
The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated  
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher  
density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications  
where a simple interfacing, battery operating and battery backup are the important design objectives. It has been  
packaged in 32-pin SOP,32-pin TSOP and 32-pin sTSOP.  
Features  
Single 2.7~3.6V power supply  
Small stand-by current: 1µA (3.0V, typical)  
No clocks, No refresh  
All inputs and outputs are TTL compatible.  
Easy memory expansion by CS1# and CS2  
Common Data I/O  
Three-state outputs: OR-tie Capability  
OE# prevents data contention on the I/O bus  
R10DS0049EJ0200 Rev.2.00  
2011.01.14  
Page 1 of  
15  

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