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R1800F-AP PDF预览

R1800F-AP

更新时间: 2024-11-09 13:12:47
品牌 Logo 应用领域
美微科 - MCC 二极管高压
页数 文件大小 规格书
2页 75K
描述
Rectifier Diode, 1 Element, 0.5A, 1800V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

R1800F-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.19
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1800 V最大反向恢复时间:0.5 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

R1800F-AP 数据手册

 浏览型号R1800F-AP的Datasheet PDF文件第2页 
R1200  
THRU  
R2000  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
500 Milliamp  
High Voltage  
Silicon Rectifier  
1200 to 2000 Volts  
Features  
·
·
·
·
·
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
High Voltage  
DO-41  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum Maximum  
D
RMS  
DC  
Voltage  
Blocking  
Voltage  
1200V  
1500V  
1800V  
2000V  
R1200  
R1500  
R1800  
R2000  
---  
---  
---  
---  
1200V  
1500V  
1800V  
2000V  
840V  
1050V  
1260V  
1400V  
A
Cathode  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
Average Forward  
Current  
IF(AV)  
500mA  
TA = 50°C  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
4.10  
2.00  
.70  
Instantaneous  
Forward Voltage  
R1200-R1800  
R2000  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
VF  
IR  
1.6V  
2.6V  
IFM = 0.5A;  
TA = 50°C  
1.000  
25.40  
---  
5.0mA  
50mA  
TA = 25°C  
TA = 100°C  
Typical Junction  
Capacitance  
CJ  
30pF  
Measured at  
1.0MHz, VR=4.0V  
www.mccsemi.com  

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