Datasheet > R15KP170CAE3TR

R15KP170CAE3TR

更新时间： 2024-11-23 16:32:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	193K
描述
Trans Voltage Suppressor Diode, 15000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 5R, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

R15KP170CAE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	ROHS COMPLIANT, PLASTIC, CASE 5R, 2 PIN	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.68
最小击穿电压：	189 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PBCY-W2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	15000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	1.56 W	认证状态：	Not Qualified
最大重复峰值反向电压：	170 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WIRE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

R15KP170CAE3TR 数据手册

15KP22 thru 15KP280CA, e3

15,000 W TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These Microsemi 15 kW Transient Voltage Suppressors (TVSs) are

designed for applications requiring protection of voltage-sensitive electronic

devices that may be damaged by harsh or severe voltage transients

including lightning per IEC61000-4-5 and class levels with various source

impedances described herein. This series is generally available in 22 to

280 volt standoff voltages (V_WM) in both unidirectional and bi-directional

offered in two different package designs for axial and radial configurations.

Consult factory for availability of the 17 and 18 Volt devices on a special

order basis. Microsemi also offers numerous other TVS products to meet

CASE 5A

(DO-204AR)

CASE 5R

higher or lower power demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Available in both Unidirectional and Bidirectional

•

Protection from switching transients and induced RF

Fast response

construction (Bidirectional with C or CA suffix)

• Available in both axial-leaded and radial packages

(include R prefix in part number for radial package option

shown in figure as “case 5R,” e.g. R15KP22A)

Protection from ESD, and EFT per IEC 61000-4-2 and

IEC 61000-4-4

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1,2,3,4: 15KP22A - 15KP280A or CA

• Selections for 22 to 280 volt standoff voltages (V_WM

)

• Suppresses transients up to 15 kW @ 10/1000 µs and

100 kW @ 8/20 µs (see Figure 1)

Class 5: 15KP22A - 15KP280A or CA (short distance)

Class 5: 15KP22A - 15KP110A or CA (long distance)

• Optional 100% screening for avionics grade is available

by adding MA prefix to part number for added 100%

temperature cycle -55^oC to +125^oC (10X) as well as surge

(3X) and 24 hours HTRB with post test V_BR& I_D(in the

operating direction for unidirectional or both directions for

bidirectional)

• Options for screening in accordance with MIL-PRF-19500

for JANTX are available by adding MX prefix respectively

to the part numbers.

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1 & 2: 15KP22A to 15KP280A or CA

Class 3: 15KP22A to 15KP240A or CA

Class 4: 15KP22A to 15KP120A or CA

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

• Moisture classification is Level 1 with no dry pack required

Class 2: 15KP22A to 15KP220A or CA

Class 3: 15KP22A to 15KP110A or CA

Class 4: 15KP22A to 15KP54A or CA

per IPC/JEDEC J-STD-020B

• RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

• Peak Pulse Power dissipation at 25^ºC: 15,000 watts at

10/1000 μs (also see Figures 1 and 2)

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.05%

•

FINISH: Tin-Lead or RoHS compliant annealed

matte-Tin plating readily solderable per MIL-STD-

750, method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^ºC to +150^ºC

•

MARKING: Body marked with part number

• Thermal resistance: 20^ºC/W junction to lead, or 80^ºC/W

junction to ambient when mounted on FR4 PC board with

4 mm²copper pads (1oz) and track width 1 mm, length

25 mm

POLARITY: Band denotes cathode for the axial-

leaded package and a dot denotes cathode terminal

for the radial package. Bidirectional not marked for

polarity

• Steady-State Power dissipation: 6 watts at T_L= 30^oC, or

1.56 watts at T_A= 25^ºC when mounted on FR4 PC board

described for thermal resistance

•

WEIGHT: 1.5 grams (approximate)

TAPE & REEL option: Standard per EIA-296 for

axial package (add “TR” suffix to part number)

• Forward Surge: 200 Amps 8.3 ms half-sine wave for

•

See package dimension on last page

unidirectional devices only

• Solder temperatures: 260 ^ºC for 10 s (maximum)

9-25-2009 rev. L, SD4A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与R15KP170CAE3TR相关器件

型号	品牌	获取价格	描述	数据表
R15KP170CA-PBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
R15KP170CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 15000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, RO
R15KP170CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 15000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, RO
R15KP170CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 15000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, PL
R15KP17A	NJSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSORS
R15KP17AHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
R15KP17ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 15000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, PL
R15KP17C	NJSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSORS
R15KP17CA	NJSEMI	获取价格	Diode TVS Single Uni-Dir 170V 15KW 2-Pin Case 5R
R15KP17CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 15000W, 17V V(RWM), Bidirectional, 1 Element, Silicon, ROH

与R15KP170CAE3TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

R15KP170CAE3TR

R15KP170CAE3TR 技术参数

R15KP170CAE3TR 数据手册

与R15KP170CAE3TR相关器件

与R15KP170CAE3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

R15KP170CAE3TR

R15KP170CAE3TR 技术参数

R15KP170CAE3TR 数据手册

与R15KP170CAE3TR相关器件

与R15KP170CAE3TR相关文章

您还可以找

您在本页遇到什么问题？