5秒后页面跳转
R0472YC12EKER PDF预览

R0472YC12EKER

更新时间: 2024-11-17 14:59:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
8页 332K
描述
The Littelfuse "P" series of fast switching thyristors have a regenerative gate structure to ensur

R0472YC12EKER 数据手册

 浏览型号R0472YC12EKER的Datasheet PDF文件第2页浏览型号R0472YC12EKER的Datasheet PDF文件第3页浏览型号R0472YC12EKER的Datasheet PDF文件第4页浏览型号R0472YC12EKER的Datasheet PDF文件第5页浏览型号R0472YC12EKER的Datasheet PDF文件第6页浏览型号R0472YC12EKER的Datasheet PDF文件第7页 
NGB8202AN  
Ignition IGBT  
20 A, 400 V, N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
Littelfuse.com  
20 AMPS, 400 VOLTS  
Features  
V
CE(on) = 1.3 V @  
Ideal for Coil−on−Plug and Driver−on−Coil Applications  
Gate−Emitter ESD Protection  
IC = 10 A, VGE . 4.5 V  
C
Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
Integrated ESD Diode Protection  
R
G
G
Low Threshold Voltage for Interfacing Power Loads to Logic or  
Microprocessor Devices  
R
GE  
Low Saturation Voltage  
High Pulsed Current Capability  
E
These are Pb−Free Devices  
Applications  
2
D PAK  
CASE 418B  
STYLE 4  
Ignition Systems  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
440  
Unit  
V
4
V
CES  
Collector  
V
CER  
440  
V
GB  
V
GE  
"15  
V
8202xxG  
AYWW  
Collector Current−Continuous  
I
C
20  
50  
A
DC  
A
AC  
@ T = 25°C − Pulsed  
C
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
1
Gate  
3
G
Emitter  
2
Transient Gate Current (t2 ms, f100 Hz)  
ESD (Charged−Device Model)  
G
Collector  
ESD  
ESD  
2.0  
GB8202xx = Device Code  
xx = AN  
ESD (Human Body Model)  
kV  
R = 1500 W, C = 100 pF  
8.0  
A
= Assembly Location  
Y
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
Total Power Dissipation @ T = 25°C  
P
D
150  
1.0  
W
W/°C  
C
Derate above 25°C  
ORDERING INFORMATION  
Operating & Storage Temperature Range  
T , T  
−55 to +175  
°C  
J
stg  
Device  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NGB8202ANT4G  
NGB8202ANTF4G  
800/Tape & Reel  
700/Tape & Reel  
2
D PAK  
(Pb−Free)  
Specifications subject to change without notice. © 2016 Littelfuse, Inc.  
1
Publication Order Number:  
December, 2016 − Rev. 10  
NGB8202AN/D  

与R0472YC12EKER相关器件

型号 品牌 获取价格 描述 数据表
R0472YC12FKER LITTELFUSE

获取价格

The Littelfuse "P" series of fast switching thyristors have a regenerative gate structure
R0472YC16EKER LITTELFUSE

获取价格

The Littelfuse "P" series of fast switching thyristors have a regenerative gate structure
R0472YC16FKER LITTELFUSE

获取价格

The Littelfuse "P" series of fast switching thyristors have a regenerative gate structure
R0472YS12E LITTELFUSE

获取价格

Silicon Controlled Rectifier, 945A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,
R0472YS12F LITTELFUSE

获取价格

Silicon Controlled Rectifier, 945A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,
R0472YS12H LITTELFUSE

获取价格

Silicon Controlled Rectifier, 945A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,
R0472YS12J LITTELFUSE

获取价格

Silicon Controlled Rectifier, 945A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,
R0472YS14E LITTELFUSE

获取价格

Silicon Controlled Rectifier, 945A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,
R0472YS14F LITTELFUSE

获取价格

Silicon Controlled Rectifier, 945A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,
R0472YS14H LITTELFUSE

获取价格

Silicon Controlled Rectifier, 945A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,