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QSB320.TR PDF预览

QSB320.TR

更新时间: 2024-02-01 14:06:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体光电晶体管光电晶体管
页数 文件大小 规格书
3页 52K
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QSB320.TR 数据手册

 浏览型号QSB320.TR的Datasheet PDF文件第2页浏览型号QSB320.TR的Datasheet PDF文件第3页 
QSB320  
SURFACE MOUNT SILICON  
INFRARED PHOTOTRANSISTOR  
PACKAGE DIMENSIONS  
0.118 (3.0)  
0.102 (2.6)  
0.083 (2.1)  
0.067 (1.7)  
0.091 (2.3)  
0.083 (2.1)  
0.041 (0.1)  
0.035 (0.9)  
0.028 (0.7)  
0.094 (2.4)  
0.134 (3.4)  
0.118 (3.0)  
FEATURES  
SCHEMATIC  
0.043 (1.1)  
0.020 (0.5)  
Surface Mount PLCC-2 Package  
Wide Reception Angle, 120°  
High Sensitivity  
COLLECTOR  
COLLECTOR  
0.024 (0.6)  
0.007 (.18)  
0.016 (0.4)  
0.005 (.12)  
Phototransistor Output  
NOTES:  
Matched Emitter: QEB421  
EMITTER  
1. Dimensions for all drawings are in inches (millimeters).  
2. Tolerance of .010 (.25) on all non nominal dimensions  
unless otherwise specified.  
NOTES  
(T = 25°C unless otherwise specified)  
ABSOLUTE MAXIMUM RATINGS  
A
1. Derate power dissipation linearly  
2.2 mW/°C above 25°C.  
2. RMA flux is recommended.  
3. Methanol or isopropyl alcohols  
are recommended as cleaning  
agents.  
Parameter  
Operating Temperature  
Storage Temperature  
Soldering Temperature (Flow)(2,3)  
Collector Emitter Voltage  
Emitter Collector Voltage  
Collector Current  
Symbol  
TOPR  
TSTG  
TSOL-F  
VCE  
Rating  
Unit  
°C  
°C  
°C  
V
-55 to +100  
-55 to +100  
260 for 10 sec  
4. Dꢀ= 940 nm.  
35  
5
VEC  
V
IC  
15  
165  
mA  
mW  
Power Dissipation(1)  
PD  
(TA =25°C)  
ELECTRICAL / OPTICAL CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
DPS  
MIN  
400  
30  
5
TYP  
880  
MAX  
UNITS  
nm  
nm  
Deg.  
nA  
V
Peak Sensitivity Wavelength  
Wavelength Sensitivity Range  
Reception Angle  
DSR  
1000  
0
120  
Collector Emitter Dark Current  
Collector Emitter Breakdown  
Emitter Collector Breakdown  
On-State Collector Current  
Saturation Voltage  
VCE = 25 V, Ee = 0  
IC = 1 mA  
ID  
200  
BVCEO  
BVECO  
IC (ON)  
VCE (SAT)  
tr  
IE = 100 µA  
V
Ee = 0.1 mW/cm2(4), VCE = 5 V  
Ee = 0.5 mW/cm2(4), IC = 0.05 mA  
VCC = 5 V, RL = 100 1  
IC = 1 mA  
16  
µA  
V
0.3  
Rise Time  
8
µs  
Fall Time  
tf  
8
µs  
2001 Fairchild Semiconductor Corporation  
DS300386 2/26/01  
1 OF 3  
www.fairchildsemi.com  

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