QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.083 (2.1)
0.067 (1.7)
0.091 (2.3)
0.083 (2.1)
0.041 (0.1)
0.035 (0.9)
0.028 (0.7)
0.094 (2.4)
0.134 (3.4)
0.118 (3.0)
FEATURES
SCHEMATIC
0.043 (1.1)
0.020 (0.5)
• Surface Mount PLCC-2 Package
• Wide Reception Angle, 120°
• High Sensitivity
COLLECTOR
COLLECTOR
0.024 (0.6)
0.007 (.18)
0.016 (0.4)
0.005 (.12)
• Phototransistor Output
NOTES:
• Matched Emitter: QEB421
EMITTER
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of .010 (.25) on all non nominal dimensions
unless otherwise specified.
NOTES
(T = 25°C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
A
1. Derate power dissipation linearly
2.2 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Symbol
TOPR
TSTG
TSOL-F
VCE
Rating
Unit
°C
°C
°C
V
-55 to +100
-55 to +100
260 for 10 sec
4. Dꢀ= 940 nm.
35
5
VEC
V
IC
15
165
mA
mW
Power Dissipation(1)
PD
(TA =25°C)
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
DPS
MIN
—
400
—
—
30
5
TYP
880
—
MAX
—
UNITS
nm
nm
Deg.
nA
V
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
DSR
1000
—
0
120
—
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
Saturation Voltage
VCE = 25 V, Ee = 0
IC = 1 mA
ID
200
—
BVCEO
BVECO
IC (ON)
VCE (SAT)
tr
—
IE = 100 µA
—
—
V
Ee = 0.1 mW/cm2(4), VCE = 5 V
Ee = 0.5 mW/cm2(4), IC = 0.05 mA
VCC = 5 V, RL = 100 1
IC = 1 mA
16
—
—
—
—
—
µA
V
—
0.3
—
Rise Time
8
µs
Fall Time
tf
8
—
µs
2001 Fairchild Semiconductor Corporation
DS300386 2/26/01
1 OF 3
www.fairchildsemi.com