Datasheet > QN7002-T1B-AT

QN7002-T1B-AT

更新时间： 2024-11-12 20:04:19

品牌	Logo	应用领域
日电电子 - NEC		开关光电二极管晶体管
页数	文件大小	规格书
6页	148K
描述
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-59, MINI MOLD PACKAGE-3

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技术参数
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QN7002-T1B-AT 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, SC-59, MINI MOLD PACKAGE-3	Reach Compliance Code：	compliant
风险等级：	5.72	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	0.2 A
最大漏源导通电阻：	2.7 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

QN7002-T1B-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

QN7002

N-CHANNEL MOSFET

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The QN7002, N-channel vertical type MOSFET designed for

general-purpose switch, is a device which can be driven directly

by a 4.5 V power source.

FEATURES

• Directly driven by a 4.5 V power source.

• Low on-state resistance

RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

R^DS(on)2= 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)

ORDERING INFORMATION

PART NUMBER

QN7002-T1B-AT

QN7002-T2B-AT

PACKAGE

SC-59 (Mini Mold)

Remark "-AT" indicates Pb-free.

This product dose not contain Pb external electrode and other parts.

1. Source

2. Gate

8 mm embossed carrier tape, 3,000 pcs/reel.

3. Drain

Remark for Agent ORDER NUMBER "2SK4079A(1)" must be used to order, instead of "QN7002".

For instance, "2SK4079A(1)-T1B-AT".

Marking: G28

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

Drain Current (pulse) ^Note

Total Power Dissipation

Channel Temperature

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T

Drain

200

°C

Body

Diode

800

Gate

200

T^ch

150

Gate

Protection

Diode

Storage Temperature

T^stg

−55 to +150

°C

Source

Note PW ≤ 10 μs, Duty Cycle ≤ 1%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18257EJ1V0DS00 (1st edition)

Date Published December 2006 NS CP (K)

Printed in Japan

2006

12 3 4 5 6

中文翻译

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与QN7002-T1B-AT相关器件

型号	品牌	获取价格	描述	数据表
QN7002-T2B-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
QN7002-T2B-AT	RENESAS	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-59, MINI MOLD PACKAGE-3
QN8006	ETC	获取价格	高性能数字FM收发器针对便携式设备
QN8006B	QUANTUM	获取价格	High Performance Digital FM Transceiver for Portable Devices
QN8007B	QUANTUM	获取价格	低功耗数字调频接收单芯片
QN8025	QUANTUM	获取价格	低功耗数字调频接收单芯片
QN8027	QUANTUM	获取价格	High Performance Digital FM Transmitter for Portable Devices
QN8035	QUANTUM	获取价格	Single-Chip Low-Power FM Receiver for Portable Devices
QN8041AH	INTEL	获取价格	Microcontroller, 8-Bit, MROM, 8048 CPU, 0.833MHz, NMOS, PQCC44, PLASTIC, LCC-44
QN8042AH	INTEL	获取价格	Microcontroller, 8-Bit, MROM, 8048 CPU, 0.833MHz, NMOS, PQCC44, PLASTIC, LCC-44

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