Datasheet > QL67F6SA

QL67F6SA

更新时间： 2024-02-08 15:26:13

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
3页	504K
描述
Red Laser Diode

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数据手册

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QL67F6SA 数据手册

rev 2.0 13.11.2015

QL67F6S Series

Description

QL76F6S series are MOCVD grown band Gain-Guided type InGaAlP Laser Diode with quantum

well structure. They are emitting at typical 670 nm with rated output power of 10 mW CW at room

temperature. The 5.6 mm TO package includes a cap and flat window, and contains a built in

monitor PD.

Maximum Ratings

Values

Parameter

Symbol

Unit

Min.

Max.

Optical Output Power

P_O

Laser Diode Reverse Voltage

Photo Diode Reverse Voltage

Operating Temperature

Storage Temperature

V_LDR

V_PDR

T_CASE

T_STG

T_SOLD

-10

-40

+60

+85

°C

Soldering Temperature

Specifications (T_CASE=25°C)

Values

Typ.

Parameter

Peak Wavelength

Symbol

Unit

Min.

Max.

λ_P

P_O

660

670

2.3

680

Optical Output Power

Threshold Current

Forward Current

Forward Voltage

Beam Divergence

Beam Angle

I_TH

I_OP

V_OP

2.6

ӨII

deg.

µm

Ө┴

ΔӨII

ΔӨ┴

ΔX, ΔY, ΔZ

±1.5

±2.5

±60

Beam Angle

Positional Accuracy

Mode Structure

Monitor Current

0.3

I_M

0.1

0.5

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