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QL65F6SA PDF预览

QL65F6SA

更新时间: 2024-02-26 23:05:43
品牌 Logo 应用领域
其他 - ETC 二极管激光二极管
页数 文件大小 规格书
3页 45K
描述
InGaAlP Laser Diode

QL65F6SA 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.61Base Number Matches:1

QL65F6SA 数据手册

 浏览型号QL65F6SA的Datasheet PDF文件第2页浏览型号QL65F6SA的Datasheet PDF文件第3页 
QL65F6SA  
InGaAlP Laser Diode  
2003 Rev 0  
OVERVIEW  
QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure.  
It's an attractive light source, with a typical light output power of 10mW and low operating current for  
optoelectronic devices such as Optical Pick-up & Bar Code Reader.  
APPLICATION  
- Optical Pick-up  
- Bar Code Reader  
- Laser Module  
FEATURES  
- Visible Light Output: λp = 650 nm  
- Optical Power Output: 10 mW CW  
- Package Type : TO-18 (5.6 mmφ)  
- Built-in Photo Diode for Monitoring Laser Diode  
ELECTRICAL CONNECTION  
Bottom View  
Pin Configuration  

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