TRANSISTOR MODULE
QCA75A/QCB75A40/60
UL;E76102(M)
QCA75A and QCB75A are dual Darlington power
94max
94max
20
20
27
transistor modules which have series-connected high speed,
high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode.
80±0.2
13 13 13 13
7
6.5
12
8
8
8
8
12
7
2ーφ6.5
8
8
6.5
C2E1
E2
C1
● IC=75A, VCEX=400/600V
3ーM5
80
2ーφ6.5�
�
● Low saturation voltage for higher efficiency.
● Isolated mounting base
5ーM4
2
11 10 10 10 13
3
3
3
3
110TAB
C
CE
E
B1
B2
●
EBO
V
10V for faster switching speed.
(Applications)
Motor Control(VVVF), AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
QCA
QCB
E2
B2 C2E1
B1
C1
E2 E2
B2 C2E1 E1
B1 C1
Unit:A
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
QCA75A40 QCA75A60
QCB75A40 QCB75A60
Symbol
Item
Conditions
Unit
VCBO
VCEX
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
400
400
600
600
V
V
VBE=-2V
)pw≦1ms
10
V
A
(
75(150)
Reverse Collector Current
Base Current
75
4.5
A
-IC
B
I
A
T
P
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
350
W
℃
℃
V
TC=25℃
j
T
-40 to +150
-40 to +125
2500
Tstg
VISO
A.C.1minute
4.7(48)
Mounting(M6) Recommended Value 2.5
Terminal(M5) Recommended Value 1.5
Mounting(M5) Recommended Value 1.5
Terminal(M4) Recommended Value 1.0
-
-
-
-
3.9(25
-
-
-
-
40)
QCA75A
2.7(28)
2.5(15
2.5(15
1.4(10
25)
25)
14)
Mounting
Torque
N・m
㎏f・B
2.7(28)
QCB75A
1.5(15)
Mass
Typical Value
g
QCA75A/QCB75A
240/195
■Electrical Characteristics
Ratings
Symbol
Item
Conditions
Unit
Min.
Max.
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
CB
CBO
1.0
mA
mA
V
=V
EB
V =V
EBO
300
QCA75A40
QCB75A40
QCA75A60
QCB75A60
QCA75A40
QCB75A40
QCA75A60
QCB75A60
300
450
400
CEO(SUS)
V
V
V
Ic=1A
Collector Emitter
Sustaning Voltage
CEX(SUS)
V
B2
Ic=15A,I =-5A
600
FE
h
DC Current Gain
CE
Ic=75A,V =2V/5V
75/100
VCE(sat)
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
B
2.0
2.5
V
V
Ic=75A,I =1A
B
V
Ic=75A,I =1A
ton
ts
2.0
Vcc=300V,Ic=75A
Switching Time
Storage Time
Fall Time
12.0
3.0
μs
B1
B2
I =1A,I =-1A
tf
ECO
V
Collector-Emitter Reverse Voltage
1.4
V
-Ic=75A
Rth(j-c)
Thermal Impedance (junction to case)
Transistor part/Diode part
0.35/1.3
℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com