TRANSISTOR MODULE
QCA50B/QCB50A40/60
UL;E76102 M
QCA50B and QCB50A are dual Darlington power
transistor modules which have series-connected high speed,
high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode.
IC 50A, VCEX 400/600V
Low saturation voltage for higher efficiency.
Isolated mounting base
EBO
V
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
QCA
QCB
Unit
A
Maximum Ratings
Tj 25
Ratings
QCA50B40 QCA50B60
QCA50A40 QCA50A60
Symbol
Item
Conditions
Unit
VCBO
VCEX
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
400
400
600
600
V
V
VBE
2V
10
V
A
A
A
W
=pw 1ms
50 100
Reverse Collector Current
Base Current
50
3
IC
B
I
T
P
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
300
TC 25
j
T
40
40
150
125
Tstg
VISO
A.C.1minute
2500
V
Mounting M6 Recommended Value 2.5 3.9 25 40
Terminal M5 Recommended Value 1.5 2.5 15 25
Mounting M5 Recommended Value 1.5 2.5 15 25
Terminal M4 Recommended Value 1.0 1.4 10 14
4.7 48
2.7 28
2.7 28
1.5 15
240/195
QCA50B
QCA50A
Mounting
Torque
N m
f B
Mass
QCA50B/QCA50A
Typical Value
g
Electrical Characteristics
Tj 25
Ratings
Symbol
Item
Conditions
Unit
Min.
Max.
1.0
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
mA
mA
CB
EB
CBO
V
V
V
300
EBO
V
QCA50B40
QCB50A40
QCA50B60
QCB50A60
QCA50B40
QCB50A40
QCA50B60
QCB50A60
300
450
400
CEO SUS
V
V
V
Ic 1A
Collector Emitter
Sustaning Voltage
CEX SUS
V
B2
I
Ic 10A
5A
600
FE
h
DC Current Gain
75/100
CE
Ic 50A
Ic 50A
Ic 50A
V
2V/5V
0.67A
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
2.0
2.5
V
V
B
I
I
BE(sat)
ton
ts
V
B
0.67A
1.0
Vcc 300V Ic 50A
Switching Time
Storage Time
Fall Time
12.0
2.0
s
B1
I
B2
1A
I
1A
tf
ECO
V
Collector-Emitter Reverse Voltage
1.4
V
Ic 50A
Transistor part Diode part
Rth(j-c)
Thermal Impedance (junction to case)
0.4/1.3
/W
3