Datasheet > Q62702-A3474

Q62702-A3474

更新时间： 2024-09-26 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	34K
描述
PNP Silicon AF Transistor

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中文翻译

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数据手册

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Q62702-A3474 数据手册

SMBTA 56M

PNP Silicon AF Transistor

• High breakdown voltage

• Low collector-emitter saturation voltage

• Complementary type: SMBTA 06M (NPN)

VPW05980

Type

Marking Ordering Code Pin Configuration

Package

SMBTA 56M s2G

Q62702-A3474 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Peak collector current

Base current

CEO

CBO

EBO

500

100

Peak base current

200

Total power dissipation, T ≤ 95 °C

tot

Junction temperature

Storage temperature

150

°C

- 65...+150

stg

Thermal Resistance

Junction ambient

K/W

≤110

≤55

thJA

thJS

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm Cu

Semiconductor Group

Au -11-1998

1998-11-01

Semiconductor Group

12 3 4

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