Datasheet > Q62702-A376

Q62702-A376

更新时间： 2024-02-14 13:28:42

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
4页	105K
描述
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)

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数据手册

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Q62702-A376 数据手册

Silicon Switching Diode Array

BAW 100

● For high-speed switching

● Electrically insulated diodes

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BAW 100

JSs

Q62702-A376

SOT-143

Maximum Ratings

Parameter

Symbol

Values

Unit

Reverse voltage

Peak reverse voltage

Forward current

200

Surge forward current, t = 1 µs

IFS

4.5

Total power dissipation, T

= 31 ˚C

tot

330

˚C

Junction temperature

150

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 500

≤ 360

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4

中文翻译

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