Datasheet > Q62702-A712

Q62702-A712

更新时间： 2024-01-27 10:11:47

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关高压
页数	文件大小	规格书
3页	65K
描述
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)

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中文翻译

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数据手册

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Q62702-A712 数据手册

Silicon Switching Diode Array

BAW 101

● Electrically insulated high-voltage

medium-speed diodes

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BAW 101

JPs

Q62702-A712

SOT-143

Maximum Ratings

Parameter

Symbol

Values

300

Unit

Reverse voltage

Peak reverse voltage

Forward current

300

250

Peak forward current

Surge forward current, t = 1 µs

Total power dissipation, T^S≤ 35 ˚C

Junction temperature

Storage temperature range

500

4.5

tot

350

˚C

150

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 470

≤ 330

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3

中文翻译

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