Datasheet > Q62702-A781

Q62702-A781

更新时间： 2024-01-23 09:59:51

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
3页	90K
描述
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)

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中文翻译

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数据手册

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Q62702-A781 数据手册

Silicon Switching Diodes

BAW 79 A

… BAW 79 D

● For high-speed switching

● High breakdown voltage

● Common cathode

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BAW 79 A

BAW 79 B

BAW 79 C

BAW 79 D

Q62702-A781

Q62702-A782

Q62702-A771

Q62702-A733

SOT-89

Maximum Ratings per Diode

Parameter

Symbol

Values

Unit

BAW

400

Reverse voltage

100

200

Peak reverse voltage

Forward current

VRM

200

Peak forward current

Surge forward current

t = 1 µs

Total power dissipation

Ptot

= 115 ˚C

Junction temperature

150

˚C

Storage temperature range Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 175

≤ 35

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3

中文翻译

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