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Q62702-A733 PDF预览

Q62702-A733

更新时间: 2024-01-10 20:34:52
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管开关
页数 文件大小 规格书
3页 90K
描述
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)

Q62702-A733 数据手册

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Silicon Switching Diodes  
BAW 79 A  
… BAW 79 D  
For high-speed switching  
High breakdown voltage  
Common cathode  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
BAW 79 A  
BAW 79 B  
BAW 79 C  
BAW 79 D  
GE  
GF  
GG  
GH  
Q62702-A781  
Q62702-A782  
Q62702-A771  
Q62702-A733  
SOT-89  
Maximum Ratings per Diode  
Parameter  
Symbol  
Values  
Unit  
BAW  
BAW  
BAW  
BAW  
400  
400  
Reverse voltage  
V
R
50  
50  
100  
100  
200  
V
A
Peak reverse voltage  
Forward current  
VRM  
200  
I
I
I
F
1
Peak forward current  
FM  
FS  
1
Surge forward current  
10  
t = 1 µs  
Total power dissipation  
Ptot  
1
W
TS  
= 115 ˚C  
Junction temperature  
Tj  
150  
˚C  
Storage temperature range Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
175  
35  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1

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