Datasheet > Q62702-A3470

Q62702-A3470

更新时间： 2024-01-18 23:26:44

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管仪表
页数	文件大小	规格书
3页	37K
描述
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)

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Q62702-A3470 数据手册

BAT 64-07W

Silicon Schottky Diodes

• For low-loss, fast-recovery, meter protection,

bias isolation and clamping applications

• Integrated diffused guard ring

• Low forward voltage

VPS05605

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration

Package

BAT 64-07W 67s

Q62702-A3470

1 = C1 2 = C2 3 = A2 4 = A1 SOT-343

Maximum Ratings

Parameter

Symbol

Value

Unit

Diode reverse voltage

Forward current

250

Average forward current (50/60Hz, sinus)

120

FAV

FSM

800

Surge forward current (t< 100µs)

250

Total power dissipation, T ≤ 104 °C

tot

Junction temperature

Storage temperature

150

°C

-55...+150

stg

Thermal Resistance

Junction - ambient

K/W

≤455

≤185

thJA

thJS

Junction - soldering point

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm Cu

Semiconductor Group

Sep-07-1998

1998-11-01

Semiconductor Group

12 3

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