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Q6035NH5TP PDF预览

Q6035NH5TP

更新时间: 2024-11-05 19:33:47
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力特 - LITTELFUSE /
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Q6035NH5TP 数据手册

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Teccor® brandThyristors  
35 Amp Standard & 30 / 35 Amp Alternistor (High Commutation) Triacs  
RoHS  
Qxx30xHx & Qxx35xx & Qxx35xHx Series  
Description  
The 30 Amp / 35 Amp bi-directional solid state switch series  
is designed for AC switching and phase control applications  
such as motor speed and temperature modulation controls,  
lighting controls, and static switching relays.  
Standard type devices normally operate in Quadrants I & III  
triggered from AC line.  
Alternistor type devices only operate in quadrants I, II, & III  
and are used in circuits requiring high dv/dt capability.  
Features & Benefits  
• RoHS Compliant  
• Electrically isolated  
package FASTPAK” &  
“L - Package” are UL  
recognized for 2500Vrms  
Agency Approval  
• Glass – passivated  
junctions  
Agency  
Agency File Number  
• Voltage capability up to  
800V  
E71639 (FASTPAK & L Package)  
• Surge capability up to 350A  
Main Features  
Applications  
Symbol  
IT(RMS)  
Value  
30 & 35  
400 to 800  
50  
Unit  
A
Excellent for AC switching and phase control applications  
such as heating, lighting, and motor speed controls.  
VDRM/VRRM  
IGT (Q1)  
V
Typical applications are AC solid-state switches, industrial  
power tools, exercise equipment, white goods and  
commercial appliances.  
mA  
AlternistorTriacs (no snubber required) are used in  
applications with extremely inductive loads requiring  
highest commutation performance.  
Schematic Symbol  
MT2  
Internally constructed isolated packages are offered for  
ease of heat sinking with highest isolation voltage.  
G
MT1  
Absolute Maximum Ratings —StandardTriac  
Symbol  
Parameter  
RMS on-state current (full sine wave)  
Value  
35  
Unit  
IT(RMS)  
Qxx35P5  
f = 50 Hz  
f = 60 Hz  
TC = 55°C  
t = 20 ms  
A
300  
350  
508  
Non repetitive surge peak on-state current  
(full cycle, TJ initial = 25°C)  
ITSM  
A
t = 16.7 ms  
tp = 8.3 ms  
I2t  
I2t Value for fusing  
A2s  
Critical rate of rise of on-state current  
(IG = 200mA with 0.1µs rise time)  
di/dt  
f = 120 Hz  
100  
A/μs  
TJ = 125°C  
IGTM  
Peak gate trigger current  
Average gate power dissipation  
Storage temperature range  
tp 10 μs IGT IGTM  
2
A
TJ = 125°C  
TJ = 125°C  
PG(AV)  
0.5  
W
°C  
°C  
-40 to 125  
-25 to 125  
Tstg  
TJ  
Operating junction temperature range  
Note: xx = voltage  
© 2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 10/03/16  

Q6035NH5TP 替代型号

型号 品牌 替代类型 描述 数据表
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