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PZU6.8DB2,115 PDF预览

PZU6.8DB2,115

更新时间: 2024-11-09 19:14:55
品牌 Logo 应用领域
恩智浦 - NXP 测试光电二极管
页数 文件大小 规格书
12页 107K
描述
PZUxDB2 series - Dual Zener diodes TSSOP 5-Pin

PZU6.8DB2,115 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSSOP包装说明:PLASTIC, SMD, SC-88A, 5 PIN
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.47Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODE最大正向电压 (VF):0.9 V
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:5最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.25 W认证状态:Not Qualified
标称参考电压:6.8 V最大反向电流:0.5 µA
反向测试电压:3.5 V子类别:Other Diodes
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2.06%工作测试电流:5 mA
Base Number Matches:1

PZU6.8DB2,115 数据手册

 浏览型号PZU6.8DB2,115的Datasheet PDF文件第2页浏览型号PZU6.8DB2,115的Datasheet PDF文件第3页浏览型号PZU6.8DB2,115的Datasheet PDF文件第4页浏览型号PZU6.8DB2,115的Datasheet PDF文件第5页浏览型号PZU6.8DB2,115的Datasheet PDF文件第6页浏览型号PZU6.8DB2,115的Datasheet PDF文件第7页 
PZUxDB2 series  
Dual Zener diodes  
Rev. 01 — 31 March 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Dual isolated general-purpose Zener diodes in SOT353 (SC-88A) very small  
Surface-Mounted Device (SMD) standard plastic and dark-green plastic packages.  
1.2 Features  
I Non-repetitive peak reverse power  
dissipation: PZSM = 40 W  
I Dual isolated diodes configuration  
I Total power dissipation: Ptot 250 mW I Small standard plastic package suitable  
for surface-mounted design  
I Tolerance series:  
I Small dark-green, halogen-free plastic  
package suitable for surface-mounted  
design  
B2: approximately ±2 %  
I Wide working voltage range:  
I AEC-Q101 qualified  
nominal 2.7 V to 24 V  
1.3 Applications  
I General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max  
Unit  
[1]  
[2]  
VF  
forward voltage  
IF = 100 mA  
-
-
-
-
1.1  
40  
V
PZSM  
non-repetitive peak reverse  
power dissipation  
W
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
 
 
 
 
 
 
 

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