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PZU6.8BL PDF预览

PZU6.8BL

更新时间: 2024-11-25 11:08:39
品牌 Logo 应用领域
安世 - NEXPERIA 测试二极管
页数 文件大小 规格书
12页 255K
描述
Single Zener diodesProduction

PZU6.8BL 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PBCC-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.53Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PBCC-N2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.25 W认证状态:Not Qualified
标称参考电压:6.8 V表面贴装:YES
技术:ZENER端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

PZU6.8BL 数据手册

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PZUxBL series  
Single Zener diodes in a SOD882 package  
Rev. 2 — 11 November 2019  
Product data sheet  
1. Product profile  
1.1. General description  
General-purpose Zener diodes in a SOD882 leadless ultra small Surface-Mounted Device (SMD)  
plastic package.  
1.2. Features  
Non-repetitive peak rerverse power dissipation: PZSM ≤ 40 W  
Total power dissipation: Ptot ≤ 250 mW  
Tolerance series: B: approximately ±5 %; B2: approximately ±2 %  
Wide working voltage range: nominal 2.4 V to 36 V (E24 range)  
Low reverse current IR range  
Small plastic package suitable for surface-mounted design  
AEC-Q101 qualified  
1.3. Applications  
General regulation functions  
1.4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VF  
Parameter  
Conditions  
Min  
[1] -  
Typ  
Max  
1.1  
40  
Unit  
V
forward voltage  
IF = 100 mA  
-
-
PZSM  
non-repetitive peak  
[2] -  
W
reverse power dissipation  
Ptot  
total power dissipation  
Tamb ≤ 25 °C  
[3] -  
[4] -  
-
-
250  
550  
mW  
mW  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
[2] tp = 100 μs; square wave; Tj = 25 °C prior to surge  
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.  
 
 
 
 
 
 

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