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PZT2222A_NL

更新时间: 2024-10-01 21:13:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 149K
描述
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, SOT-223, 4 PIN

PZT2222A_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-261AA包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.15
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):75JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

PZT2222A_NL 数据手册

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February 2009  
PN2222A/MMBT2222A/PZT2222A  
NPN General Purpose Amplifier  
This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.  
Sourced from process 19.  
MMBT2222A  
PZT2222A  
PN2222A  
C
C
E
E
C
B
TO-92  
SOT-23  
Mark:1P  
SOT-223  
B
E B C  
Absolute Maximum Ratings *  
T = 25×C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
VCEO  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
75  
V
V
VCBO  
VEBO  
IC  
6.0  
V
1.0  
A
TSTG  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
°C  
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These rating are based on a maximum junction temperature of 150 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
T = 25°C unless otherwise noted  
a
Max.  
Symbol  
Parameter  
Units  
PN2222A  
*MMBT2222A  
**PZT2222A  
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
PD  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
357  
125  
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.  
2
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm .  
© 2007 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0  
1

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