Datasheet > PYA28HC356E-120CWM

PYA28HC356E-120CWM

更新时间： 2024-11-12 15:48:43

品牌	Logo	应用领域
PYRAMID		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	607K
描述
EEPROM

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中文翻译

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技术参数
数据手册

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PYA28HC356E-120CWM 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Base Number Matches：	1

PYA28HC356E-120CWM 数据手册

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PYA28HC256

HIGH SPEED 32K x 8 EEPROM

FEATURES

Access Times of 70, 90 and 120ns

Single 5V±10% Power Supply

Software Data Protection

CMOS & TTL Compatible Inputs and Outputs

Endurance:

Simple Byte and Page Write

- 10,000 Write Cycles

- 100,000 Write Cycles (optional)

Low Power CMOS:

- 80 mA Active Current

- 3 mA Standby Current

Data Retention: 10 Years

Available in the following package:

– 28-Pin 600 mil Ceramic DIP

Fast Write Cycle Times

– 32-Pin Ceramic LCC (450x550 mils)

DESCRIPTIOꢀ

ThePYA28HC256isa5Volt32Kx8EEPROM. Thedevice

supports 64-byte page write operation. ThePYA28HC256

features DATA and Toggle Bit Polling as well as a system

software scheme used to indicate early completion of a

Write Cycle. The device also includes user-optional soft-

ware data protection. Data Retention is 10 Years. The

device is available in a 28-Pin 600 mil wide Ceramic DIP

and 32-Pin LCC.

FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM

PIꢀ COꢀFIꢂURATIOꢀ

DIP (C5-1)

LCC (L6)

Document # EEPROM106 REV OR

Revised January 2011

12 3 4 5 6 7...12

中文翻译

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