Datasheet > PUSB3AB2DF

PUSB3AB2DF

更新时间： 2024-11-30 11:16:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	216K
描述
Extremely low clamping low capacitance ESD protectionProduction

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PUSB3AB2DF 数据手册

PUSB3AB2DF

Extremely low clamping low capacitance ESD protection

22 November 2019

Product data sheet

1. General description

Symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS

protection family. This device is housed in a DFN0603-3 (SOT8013) leadless ultra small Surface-

Mounted Device (SMD) package designed to protect two signal lines from the damage caused by

ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of two lines

•

Very low diode capacitance C_d= 0.26 pF

Extremely low clamping to protect sensitive I/Os

Extremely low-inductance protection path to ground

ESD protection up to ±20 kV according to IEC 61000-4-2

Ultra small SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-4

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.26

12 3 4 5 6 7...11

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