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PTH12060YAZT PDF预览

PTH12060YAZT

更新时间： 2024-09-16 11:08:07
品牌 Logo 应用领域
德州仪器 - TI 双倍数据速率输入元件输出元件电源电路存储
页数 文件大小 规格书
19页 838K
描述
用于 DDR/QDR 存储器的 10A、12V 输入、总线终端电源模块 | EUY | 10 | -40 to 85

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中文翻译

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PTH12060YAZT 技术参数

是否Rohs认证：不符合生命周期：Active
零件包装代码：DFM包装说明：DIP-10
针数：10Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.43Is Samacsys：N
其他特性：OUTPUT VARIES ACCORDING TO THE INPUT AND RESISTOR DIVIDER CONFIGURATION模拟集成电路 - 其他类型：DC-DC REGULATED POWER SUPPLY MODULE
认证："UL,VDE"控制模式：VOLTAGE-MODE
效率（主输出）：83%最大输入电压：13.2 V
最小输入电压：10.8 V标称输入电压：12 V
JESD-30 代码：R-XDMA-X10JESD-609代码：e1
长度：25.27 mm湿度敏感等级：3
功能数量：1输出次数：1
端子数量：10最高工作温度：85 °C
最低工作温度：-40 °C最大输出电流：10 A
最大输出电压：1.8 V最小输出电压：0.55 V
封装主体材料：UNSPECIFIED封装代码：DMA
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：260保护：OUTPUT OVER CURRENT
认证状态：Not Qualified纹波电压（主输出）：0.007 Vrms
座面最大高度：9 mm表面贴装：NO
技术：HYBRID温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：UNSPECIFIED
端子节距：3.175 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED微调/可调输出：YES
宽度：15.75 mmBase Number Matches：1

PTH12060YAZT 数据手册

 浏览型号PTH12060YAZT的Datasheet PDF文件第2页浏览型号PTH12060YAZT的Datasheet PDF文件第3页浏览型号PTH12060YAZT的Datasheet PDF文件第4页浏览型号PTH12060YAZT的Datasheet PDF文件第5页浏览型号PTH12060YAZT的Datasheet PDF文件第6页浏览型号PTH12060YAZT的Datasheet PDF文件第7页 
PTH03060Y  
PTH05060Y, PTH12060Y  
www.ti.com  
SLTS222A–MARCH 2004–REVISED OCTOBER 2005  
10-A NON-ISOLATED DDR/QDR  
MEMORY BUS TERMINATION MODULES  
FEATURES  
•
VTT Bus Termination Output  
•
•
57 W/in3 Power Density  
Safety Agency Approvals:  
UL/cUL60950, EN60950, VDE  
(Output Tracks the System VREF  
)
•
•
•
•
•
•
•
•
10 A Output Current  
3.3-V, 5-V or 12-V Input Voltage  
DDR and QDR Compatible  
On/Off Inhibit (for VTT Standby)  
Undervoltage Lockout  
•
Point-of-Load Alliance (POLA™) Compatible  
NOMINAL SIZE  
1 in. x 0.62 in  
(25,4 mm x 15,75 mm)  
Operating Temperature: –40°C to 85°C  
Efficiencies up to 91%  
Output Overcurrent Protection (Non-Latching,  
Auto-Reset)  
DESCRIPTION  
The PTHxx060Y are a series of ready-to-use switching regulator modules from Texas Instruments designed  
specifically for bus termination in DDR and QDR memory applications. Operating from either a 3.3-V, 5-V or 12-V  
input, the modules generate a VTT output that will source or sink up to 10 A of current to accurately track their  
VREF input. VTT is the required bus termination supply voltage, and VREF is the reference voltage for the memory  
and chipset bus receiver comparators. VREF is usually set to half the VDDQ power supply voltage.  
Both the PTHxx060Y series employs an actively switched synchronous rectifier output to provide state-of-the-art  
stepdown switching conversion. The products are small in size (1 in × 0.62 in), and are an ideal choice where  
space, performance, and high efficiency are desired, along with the convenience of a ready-to-use module.  
Operating features include an on/off inhibit and output over-current protection (source mode only). The on/off  
inhibit feature allows the VTT bus to be turned off to save power in a standby mode of operation. To ensure tight  
load regulation, an output remote sense is also provided. Package options include both throughhole and surface  
mount configurations.  
STANDARD APPLICATION  
V
IN  
VREF  
VDDQ  
1 k  
1 %  
10  
9
8
VTT  
1
2
7
6
PTHxx060Y  
(Top View)  
1 k  
1 %  
Con  
hf−Ceramic  
3
4
5
C
IN  
(Required)  
SSTL−2  
Co1  
Co2  
Low−ESR  
(Required)  
Ceramic  
(Optional)  
Q
1
Bus  
BSS138  
Standby  
GND  
(Optional)  
C
= Required Capacitor; 330µF (3.3 ± 5 V Input), 560 µF (12 V Input).  
IN  
Co = Required Low-ESR Electrolyitic Capacitor; 470 µF (3.3 ± 5 V Input), 940 µF (12 V Input).  
1
Co = Ceramic Capacitance for Optimum Response to a 3 A (+ 1.5 A) Load Transient; 200 µF (3.3 ± 5 V Input), 400 µF (12 V Input).  
2
Co = Distributed hf-Ceramic Decoupling Capacitors for V bus; as Recommended for DDR Memory Applications.  
n TT  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
POLA is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2004–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...19

中文翻译

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PTH12060YAZT 替代型号

型号 品牌 替代类型 描述 数据表
PTH12060YAST TI

完全替代

 用于 DDR/QDR 存储器的 10A、12V 输入、总线终端电源模块 | EUY | 1
PTH12060YAZ TI

完全替代

 MEMORY BUS TERMINATION MODULES
PTH12060YAS TI

完全替代

 MEMORY BUS TERMINATION MODULES

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