Datasheet > PTF141501E-150W

PTF141501E-150W

更新时间： 2024-02-22 18:05:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	286K
描述
RF Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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PTF141501E-150W 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

PTF141501E-150W 数据手册

PTF141501E

Thermally-Enhanced High Power RF LDMOS FET

150 W, 1450 – 1500 MHz, 1600 – 1700 MHz

Description

The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB

PTF141501E

Package H-30260-2

applications. This device is characterized for Digital Audio Broadcast

operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging

provides the coolest operation available. Full gold metallization ensures

excellent device lifetime and reliability.

Features

DAB Drive-up at 28 Volts

•

Thermally-enhanced package, pB-free and

RoHS-compliant

V_DD= 28 V, f = 1500 MHz, I_DQ= 1.5 A, DAB mode 2

•

Broadband internal matching

-20

-25

-30

-35

-40

-45

-50

-55

Typical DAB Mode 2 performance at 1500

MHz, 32 V

- Average output power = 50 W

- Efficiency = 28%

Regrowth

- Spectral regrowth = –30 dBc

Efficiency

- D 975 kHz f

•

Typical DAB Mode 2 performance at 1500

MHz, 28 V

- Average output power = 40 W

- Efficiency = 26%

- Spectral regrowth = –31 dBc

- D 975 kHz f

•

Typical CW performance, 1500 MHz, 28 V

- Minimum output power = 150 W

- Linear gain = 16.5 dB

Output Power (W) Average

- Efficiency = 48% at P–1dB

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR at 28 V, 150

W (CW) output power

RF Characteristics

DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

= 32 V, I

= 1.5 A, P

= 50 W

, f = 1500 MHz, DAB Mode 2, f D 975 kHz

OUT

AVG

Characteristic

Symbol

Min

—

Typ

–30

16.5

Max

—

Unit

dBc

Spectral Regrowth

Gain

RGTH

—

Drain Efficiency

h_D

—

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 12

Rev. 04, 2008-02-13

12 3 4 5 6 7...12

中文翻译

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与PTF141501E-150W相关器件

型号	品牌	获取价格	描述	数据表
PTF141501F	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTF-142-03-L-D	SAMTEC	获取价格	Board Connector, 84 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Te
PTF-143-01-S-D	SAMTEC	获取价格	Board Connector, 86 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, Socket, RO
PTF-143-01-SM-D	SAMTEC	获取价格	Board Connector, 86 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, Socket,
PTF-143-03-SM-D	SAMTEC	获取价格	Board Connector, 86 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, Socket,
PTF-145-03-S-D	SAMTEC	获取价格	Board Connector, 90 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, Socket, RO
PTF-146-01-S-D	SAMTEC	获取价格	Board Connector, 92 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Te
PTF-146-01-S-D-DEAN2	SAMTEC	获取价格	Board Connector, 92 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Te
PTF-146-01-SM-D-DEAN2	SAMTEC	获取价格	Board Connector, 92 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Te
PTF-147-03-S-D	SAMTEC	获取价格	Board Connector, 94 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal, Socket, RO

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