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PTF141501F PDF预览

PTF141501F

更新时间： 2024-09-29 19:43:43
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器晶体管
页数 文件大小 规格书
12页 351K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31260, 2 PIN

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PTF141501F 技术参数

生命周期：Obsolete包装说明：FLATPACK, R-CDFP-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
其他特性：HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：L BAND
JESD-30 代码：R-CDFP-F2JESD-609代码：e3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLATPACK极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：417 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PTF141501F 数据手册

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Preliminary PTF141501E  
PTF141501F  
Thermally-Enhanced High Power RF LDMOS FETs  
150 W, 1450 – 1500 MHz, 1600 – 1700 MHz  
Description  
The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs  
intended for DAB applications. These devices are characterized for Digital  
Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-  
enhanced packages provide the coolest operation available. Full gold  
metallization ensures excellent device lifetime and reliability.  
PTF141501E*  
Package 30260  
PTF141501E*  
Package 31260  
Features  
DAB Drive-up at 28 Volts  
•
•
•
Thermally-enhanced packages  
Broadband internal matching  
VDD = 28 V, f = 1500 MHz, IDQ = 1.5 A, DAB mode 2  
Typical DAB Mode 2 performance at 1500  
MHz, 32 V  
- Average output power = 50 W  
- Efficiency = 29%  
35  
30  
25  
20  
15  
10  
5
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
- Spectral regrowth = –30 dBc  
Regrowth  
- ∆ 975 kHz f  
C
Efficiency  
•
Typical DAB Mode 2 performance at 1500  
MHz, 28 V  
- Average output power = 40 W  
- Efficiency = 26%  
- Spectral regrowth = –30 dBc  
- ∆ 975 kHz f  
C
0
•
•
Typical CW performance, 1500 MHz, 28 V  
- Minimum output power = 150 W  
- Linear gain = 16.5 dB  
0
10  
20  
30  
40  
50  
60  
Output Power (W) Average  
- Efficiency = 48% at P–1dB  
Integrated ESD protection: Human Body  
Model, Class 1 (minimum)  
•
•
Excellent thermal stability, low HCI drift  
Capable of handling 10:1 VSWR at 28 V, 150  
W (CW) output power  
RF Characteristics  
DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
V
DD  
= 32 V, I  
= 1.5 A, P  
= 50 W  
, f = 1500 MHz, DAB Mode 2, f ∆ 975 kHz  
DQ  
OUT  
AVG  
C
Characteristic  
Symbol  
Min  
—
Typ  
–30  
16.5  
29  
Max  
—
Units  
dBc  
dB  
Spectral Regrowth  
Gain  
RGTH  
G
ps  
—
—
Drain Efficiency  
η
D
—
—
%
All published data at T  
= 25°C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Preliminary Data Sheet 1 of 12  
Rev. 02, 2005-06-09  
1234567...12

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