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PT4410 PDF预览

PT4410

更新时间: 2024-11-09 09:59:15
品牌 Logo 应用领域
金誉半导体 - HTSEMI /
页数 文件大小 规格书
3页 1556K
描述
30 V N-Channel Enhancement Mode MOSFET

PT4410 数据手册

 浏览型号PT4410的Datasheet PDF文件第2页浏览型号PT4410的Datasheet PDF文件第3页 
PT4410  
30V N-Channel Enhancement Mode MOSFET  
VDS= 30V  
RDS(ON), Vgs@10V, Ids@12A = 10.5m  
RDS(ON), Vgs@4.5V, Ids@12A = 15mΩ  
Features  
Advanced trench process technology  
High Density Cell Design For Ultra Low On-Resistance  
Fully Characterized Avalanche Voltage and Current  
Improved Shoot-Through FOM  
Package Dimensions  
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Millimeter  
Min.  
Millimeter  
REF.  
Max.  
6.20  
5.00  
4.00  
8°  
Min.  
Max.  
0.25  
0.49  
1.75  
REF.  
A
B
C
D
5.80  
4.80  
3.80  
0°  
0.10  
0.35  
1.35  
M
H
L
0.375 REF.  
J
0.40  
0.90  
45°  
E
K
0.19  
0.25  
1.27 TYP.  
F
G
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
V
± 20  
12  
A
IDM  
48  
TA = 25oC  
TA = 75oC  
2.5  
Maximum Power Dissipation  
PD  
W
1.2  
Operating Junction and Storage Temperature Range  
Avalanche Energy with Single Pulse  
TJ, Tstg  
EAS  
-55 to 150  
150  
25  
oC  
mJ  
Junction-to-Case Thermal Resistance  
RqJC  
RqJA  
oC/W  
Junction-to-Ambient Thermal Resistance (PCB mounted)  
50  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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