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PSMG100/05 PDF预览

PSMG100/05

更新时间: 2024-02-08 11:51:42
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描述
Power MOSFET

PSMG100/05 数据手册

 浏览型号PSMG100/05的Datasheet PDF文件第2页 
ECO-PACTM 2  
Power MOSFET  
ID25  
VDSS  
= 82 A  
PSMG 100/05*  
= 500 V  
in ECO-PAC 2  
RDSon = 50 mΩ  
X18  
Single MOSFET Die  
I K10  
A1  
L N 9  
Preliminary Data Sheet  
K13  
K15  
*NTC optional  
MOSFET  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
TJ = 25°C to 150°C  
500  
V
VDGR  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
V
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
Features  
ID25  
ID80  
EAR  
EAS  
TC = 25°C  
TC = 80°C  
TC = 25°C  
TC = 25°C  
82  
62  
60  
3
A
A
mJ  
J
• Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 3000V electrical isolation  
• Low drain to tab capacitance(< 25pF)  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
• Low R  
HDMOSTM process  
• RuggeDdS (pono)lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
PD  
TC = 25°C  
400  
W
• Fast intrinsic Rectifier  
• UL certified, E 148688  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Applications  
min.  
500  
2
typ. max.  
• DC-DC converters  
• Battery chargers  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 5 mA  
VDS = VGS, ID = 8 mA  
VGS = ±20 V, VDS = 0  
V
V
4
• Switched-mode and resonant-mode  
power supplies  
±100  
nA  
• DC choppers  
• AC motor control  
IDSS  
VDS = VDSS, TJ = 25°C  
VGS = 0 V, TJ = 125°C  
VGS = 10 V, ID = IT, 1)  
VDS = 10 V, ID = IT, 1)  
100  
2
µA  
mA  
Advantages  
RDS(on)  
gfs  
50 mΩ  
• Easy assembly  
• Space savings  
• High power density  
45  
S
Ciss  
Coss  
Crss  
9400  
1280  
460  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
45  
60  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
td(off)  
tf  
RG = 1 (External),  
120  
45  
Qg(on)  
Qgs  
330  
55  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
Caution: These Devices are  
sensitive to electrostatic  
Qgd  
155  
discharge. Users should observe  
proper ESD handling precautions.  
RthJC  
RthCK  
0.30 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.15  
2003 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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