ECO-PACTM 2
Power MOSFET
ID25
VDSS
= 82 A
PSMG 100/05*
= 500 V
in ECO-PAC 2
RDSon = 50 mΩ
X18
Single MOSFET Die
I K10
A1
L N 9
Preliminary Data Sheet
K13
K15
*NTC optional
MOSFET
Symbol
TestConditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
Transient
±20
±30
V
V
VGSM
Features
ID25
ID80
EAR
EAS
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
82
62
60
3
A
A
mJ
J
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 3000V electrical isolation
• Low drain to tab capacitance(< 25pF)
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
• Low R
HDMOSTM process
• RuggeDdS (pono)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
PD
TC = 25°C
400
W
• Fast intrinsic Rectifier
• UL certified, E 148688
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Applications
min.
500
2
typ. max.
• DC-DC converters
• Battery chargers
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 5 mA
VDS = VGS, ID = 8 mA
VGS = ±20 V, VDS = 0
V
V
4
• Switched-mode and resonant-mode
power supplies
±100
nA
• DC choppers
• AC motor control
IDSS
VDS = VDSS, TJ = 25°C
VGS = 0 V, TJ = 125°C
VGS = 10 V, ID = IT, 1)
VDS = 10 V, ID = IT, 1)
100
2
µA
mA
Advantages
RDS(on)
gfs
50 mΩ
• Easy assembly
• Space savings
• High power density
45
S
Ciss
Coss
Crss
9400
1280
460
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
45
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
td(off)
tf
RG = 1 Ω (External),
120
45
Qg(on)
Qgs
330
55
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Caution: These Devices are
sensitive to electrostatic
Qgd
155
discharge. Users should observe
proper ESD handling precautions.
RthJC
RthCK
0.30 K/W
K/W
with heatsink compound (0.42 K/m.K; 50 µm)
0.15
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20