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PSB050H100SS-280A

更新时间: 2024-11-18 21:16:47
品牌 Logo 应用领域
扬杰 - YANGJIE 二极管
页数 文件大小 规格书
1页 114K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DIE-1

PSB050H100SS-280A 技术参数

生命周期:Active包装说明:DIE-1
Reach Compliance Code:unknown风险等级:5.76
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.83 VJESD-30 代码:S-XUUC-N1
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:1
最高工作温度:175 °C最大输出电流:3 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP参考标准:IEC-61000-4-2
最大重复峰值反向电压:100 V最大反向电流:5 µA
表面贴装:YES技术:SCHOTTKY
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

PSB050H100SS-280A 数据手册

  
YJ Planar Schottky Barrier Diode Die Specification  
Anode  
100V 3A, 50mil, Schottky barrier diode die based on silicon planar process  
Part No.: PSB050H100SS-280A  
Main Products Characterstics  
• Average forward current: IF(AV) = 3 A  
• Maximum operating junction temperature: Tj = 175 °C  
• ESD rating: >8KV, per IEC61000-4-2 (Contact Discharge)  
• Top metal: Ag  
Cathode  
Maximum Ratings  
Parameter  
Static Electrical Characteristics (Ta = 25°C)  
Value  
Symbol  
Rating  
Parameter  
Symbol  
Spec  
Typical  
VRRM  
IF(AV)  
Repetitive peak reverse voltage  
Average forward current  
100 V  
3 A  
Reverse breakdown voltage  
IR = 1mA  
VBR  
105 V  
120V  
Maximum forward voltage drop  
Non−repetitive peak surge current  
(tp = 8.3 ms, halfwave, 1 cycle)  
IFSM  
Tstg  
Tj  
80 A  
-50 to +175 °C  
175 °C  
IF =  
VF  
3 A  
0.83V  
5uA  
0.80V  
0.3uA  
Pulse Test: tp = 300 μs, δ 2%  
Storage temperature range  
Maximum reverse current  
VR = VRRM  
IR  
Maximum operating junction  
temperature  
Pulse Test: tp = 300 μs, δ 2%  
Device Schematics and Outline Drawing  
Top Metal  
Pad  
First Ring  
Second Ring  
Third Ring  
11 Mils  
Die Thickness *  
Die Size **  
50 Mils  
46 Mils  
42 Mils  
Ag  
Active  
Area  
Top Metal Pad  
Active Area  
Top Metal  
Top Metal  
Schottky Barrier  
SiO2  
Ag  
Back Metal  
Note: 1 * : Also can offer device with 8 mils thickness  
2 **: Cutting street width is around 1.5 mils  
Epi  
Guard Ring  
Die Size  
Substrate  
Back Metal  
Important Notice  
Specification apply to die only. Actual performance may degrade when assembled.  
Recommended Storage Environment:  
Yangjie Microelectronics does not guarantee device performance after assembly.  
All operating parameters must be validated for each customer application by customer's  
technical experts.  
Store in original container, in dessicated nitrogen, with no contamination.  
Shelf life for parts stored in above condition is 2 years.  
Data sheet information is subjected to change without notice.  
If the storage is done in normal atmosphere shelf life is reduced to 6 months.  
扬州扬杰电子科技股份有限公司  
电话:xxxx  
传真:xxxx  
电话:xxxx  
传真:xxxx  
Yangzhou Yangjie Electronics Technology Co.,Ltd.  
Yangzhou Yangjie Electronics Technology Co.,Ltd.  
Rev.O 2016/10/08  

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