Datasheet > PSB050M060SS-280B

PSB050M060SS-280B

更新时间： 2024-11-18 19:57:35

品牌	Logo	应用领域
扬杰 - YANGJIE		二极管
页数	文件大小	规格书
1页	114K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DIE-1

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PSB050M060SS-280B 技术参数

生命周期：	Contact Manufacturer	包装说明：	S-XUUC-N1
Reach Compliance Code：	unknown	风险等级：	5.76
应用：	GENERAL PURPOSE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.65 V	JESD-30 代码：	S-XUUC-N1
最大非重复峰值正向电流：	80 A	元件数量：	1
相数：	1	端子数量：	1
最高工作温度：	150 °C	最大输出电流：	3 A
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	UNCASED CHIP	参考标准：	IEC-61000-4-2
最大重复峰值反向电压：	60 V	最大反向电流：	50 µA
表面贴装：	YES	技术：	SCHOTTKY
端子形式：	NO LEAD	端子位置：	UPPER
Base Number Matches：	1

PSB050M060SS-280B 数据手册

YJ Planar Schottky Barrier Diode Die Specification

Anode

60V 3A, 50mil, Schottky barrier diode die based on silicon planar process

Part No.: PSB050M060SS-280B

Main Products Characterstics

• Average forward current: IF(AV) = 3 A

• Maximum operating junction temperature: Tj = 150 °C

• ESD rating: >8KV, per IEC61000-4-2 (Contact Discharge)

• Top metal: Ag

Cathode

Maximum Ratings

Parameter

Static Electrical Characteristics (Ta = 25°C)

Value

Symbol

Rating

Parameter

Symbol

Spec

Typical

V_RRM

I_F(AV)

Repetitive peak reverse voltage

Average forward current

60 V

3 A

Reverse breakdown voltage

I_R= 1mA

V_BR

65 V

72V

Maximum forward voltage drop

Non−repetitive peak surge current

(tp = 8.3 ms, halfwave, 1 cycle)

I_FSM

T_stg

T_j

80 A

-50 to +150 °C

150 °C

I_F=

V_F

3 A

0.65V

50uA

0.62V

20uA

Pulse Test: tp = 300 μs, δ ≤ 2%

Storage temperature range

Maximum reverse current

V_R= V_RRM

I_R

Maximum operating junction

temperature

Pulse Test: tp = 300 μs, δ ≤ 2%

Device Schematics and Outline Drawing

Top Metal

Pad

First Ring

Second Ring

Third Ring

11 Mils

Die Thickness *

Die Size **

50 Mils

46 Mils

42 Mils

Active

Area

Top Metal Pad

Active Area

Top Metal

Schottky Barrier

SiO2

Back Metal

Note: 1 * : Also can offer device with 8 mils thickness

2 **: Cutting street width is around 1.5 mils

Epi

Guard Ring

Die Size

Substrate

Back Metal

Important Notice

Specification apply to die only. Actual performance may degrade when assembled.

Recommended Storage Environment:

Yangjie Microelectronics does not guarantee device performance after assembly.

All operating parameters must be validated for each customer application by customer's

technical experts.

Store in original container, in dessicated nitrogen, with no contamination.

Shelf life for parts stored in above condition is 2 years.

Data sheet information is subjected to change without notice.

If the storage is done in normal atmosphere shelf life is reduced to 6 months.

扬州扬杰电子科技股份有限公司

电话：xxxx

传真：xxxx

电话：xxxx

传真：xxxx

Yangzhou Yangjie Electronics Technology Co.,Ltd.

Rev.O 2016/10/08

中文翻译

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