Datasheet > PS-R50D

PS-R50D

更新时间： 2024-10-31 22:26:15

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
2页	171K
描述
Paper sensors(photo switches are composed of a modulated infrared emitting)

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中文翻译

获取价格

数据手册

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PS-R50D 数据手册

Paper sensors

K O D E N S H I

P S - R 5·0PLS - R 5 0 D

DIMENSIONS

(Unit : mm)

The P S - R50 p ho to s witc he s a re c o m p o s e d o f a

modulated infrared emitting diode at the light- emitting

s id e a n d

a m o d ula te d p ho to IC (in whic h a

photodiode,signal processing circuit,constant voltage

circuit and modulation circuit are integrated) at the light

receiving side.

P S - R 5 :0HLigh level output at shielding

PS- R50D : Low level output at shielding

FEATURES

• High- speed response(0.5m sec.)

• Adjustable of detecting distance

•

Resistible to exterior light because of composed of

m o d u l a t e

APPLICATIONS

• C o p i e r s

• F a c s i m i l e s

MAXIMUM RATINGS

( T a = ℃2)5

I t e m

S y m b o Rl a t i n g U n i t

Supply voltage

8 . 0

1 2

3 0

1 0

2 0

Output voltage

Low level output current ^*

m A

m W

℃

Output transistor power dissipation

* 4

Operating temp.

T o p r .

T s t g .

6 0

7 0

Storage temp.

℃

*1. Output transistor : V *2. Output transistor : I *3. No icebound or dew

*4. The connector shall be inserted or pulled out at normal temperature.

ELECTRO-OPTICAL CHARACTERISTICS

T a = 2℃5

I t e m

Supply voltage

Low level output voltage

High level output voltage

Supply current

S y m b o l

C o n d i t i o n s

TMyi pn ..

1 6

M a x .

m A

m m

U n i t .

4 . 7 5

4 . 0

5 . 2 5

0 . 4

O L

5 V ,=I 1 0 m A

5 V ,=R1 Ωk

5 V

Kodak 90%

Minimum detecting distance

Maximum detecting distance

5 V ,=R1 Ωk

Kodak 90%

m m

Non- detecting distance

Response speed

Exterior light endure

Output state

Kodak 90%

5 V ,=R1 Ωk

2 5

0 . 5

m m

m s

l x

/ t

H L

3 , 0 0 0

NPN open collector

- 1-

中文翻译

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