ADVANCED POWER TECHNOLOGY 更新时间:2023-05-07 21:26:17
自 1999 年以来,Advanced Power Technologies (APT) 一直致力于为变压器监控市场开发独特的产品解决方案。我们的重点始终是以实惠的价格开发最好、可靠的技术。我们的第一款产品 TTC-1000 已在美国、加拿大、墨西哥、南美和加勒比海地区发货超过 11,000 件,它就是这一理念的体现。 随着 APT 进入第二个十年,我们通过设计简单易用且无需校准的免维护产品,继续巩固我们的成功。我们很自豪成为唯一一家享受终身保修并声称无需校准的变压器监控产品制造商。APT 成为电力变压器状态评估仪器领域的技术领导者绝非偶然。 2011年,Advanced Power Technologies发布了“下一代”变压器监控平台ECLIPSE。ECLIPSE旨在成为变压器监控系统的中心,集成变压器周围各处的数据,并以 TTC -1000的设计原理为基础,推动变压器监控的发展。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
APT20SC60K | ADPOW | 获取价格 | ![]() |
局域网功效二极管 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon Carbide, TO-220AC | |
APT6SC60GCT | ADPOW | 获取价格 | ![]() |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 600V V(RRM), Silicon Carbide, TO-257AA, | ||
APTGU40TDU120P | ADPOW | 获取价格 | ![]() |
栅 | Insulated Gate Bipolar Transistor, | |
SD1511-08 | ADPOW | 获取价格 | ![]() |
局域网开关晶体管 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.250 X 0 | |
APT903RAN | ADPOW | 获取价格 | ![]() |
Transistor | ||
APT5550AN | ADPOW | 获取价格 | ![]() |
Transistor | ||
MS3303 | ADPOW | 获取价格 | ![]() |
局域网放大器晶体管 | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, M214, 4 PIN | |
APT17N80CC3 | ADPOW | 获取价格 | ![]() |
Power Field-Effect Transistor, 11.5A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, M | ||
APT10SC120B | ADPOW | 获取价格 | ![]() |
Rectifier Diode, | ||
MDS550L | ADPOW | 获取价格 | ![]() |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST-1, 2 PIN | ||
MS2218 | ADPOW | 获取价格 | ![]() |
局域网放大器晶体管 | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC | |
APT8052HLL | ADPOW | 获取价格 | ![]() |
局域网开关脉冲晶体管 | Power Field-Effect Transistor, 13A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Met | |
APT1001R6SLL | ADPOW | 获取价格 | ![]() |
开关脉冲晶体管 | Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Meta | |
APT1001R6BLL | ADPOW | 获取价格 | ![]() |
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Meta | ||
APTGU30H120T3 | ADPOW | 获取价格 | ![]() |
栅 | Insulated Gate Bipolar Transistor, | |
APTGU180SK120 | ADPOW | 获取价格 | ![]() |
局域网电动机控制栅晶体管 | Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | |
APT11GF120BRD1 | ADPOW | 获取价格 | ![]() |
栅 | Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 | |
APTGU120DA120T | ADPOW | 获取价格 | ![]() |
栅 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-12 | |
APTLGF70U120T | ADPOW | 获取价格 | ![]() |
Buffer/Inverter Based Peripheral Driver | ||
MS2091 | ADPOW | 获取价格 | ![]() |
局域网开关晶体管 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.400 X 0 | |
MS1586 | ADPOW | 获取价格 | ![]() |
局域网放大器晶体管 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.437 X 0 | |
APT15S20G | ADPOW | 获取价格 | ![]() |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 200V V(RRM), Silicon, TO-257AA, HERMET | ||
MS1551 | ADPOW | 获取价格 | ![]() |
局域网放大器晶体管 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M169, 3 P | |
MS1080 | ADPOW | 获取价格 | ![]() |
局域网晶体管 | RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, PLASTIC, M174, | |
MS1491 | ADPOW | 获取价格 | ![]() |
局域网晶体管 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, | |
MRF941 | ADPOW | 获取价格 | ![]() |
放大器晶体管 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
MS2619 | ADPOW | 获取价格 | ![]() |
局域网放大器晶体管 | RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC | |
APTGT300DH60 | ADPOW | 获取价格 | ![]() |
局域网栅功率控制晶体管 | Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-8 | |
SD1400-03 | ADPOW | 获取价格 | ![]() |
局域网放大器光电二极管晶体管 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, | |
APT45GP120B2DF2 | ADPOW | 获取价格 | ![]() |
栅瞄准线功率控制晶体管 | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3 |
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