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APT8052HLL PDF预览

APT8052HLL

更新时间： 2024-11-21 19:53:07
品牌 Logo 应用领域
ADPOW 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 54K
描述
Power Field-Effect Transistor, 13A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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APT8052HLL 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code：unknown风险等级：5.67
雪崩能效等级（Eas）：1210 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：800 V最大漏极电流 (ID)：13 A
最大漏源导通电阻：0.52 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-258AAJESD-30 代码：R-MSFM-P3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：METAL
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：52 A
认证状态：Not Qualified表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

APT8052HLL 数据手册

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APT8052HLL  
800V 13A 0.520Ω  
R
POWER MOS 7 MOSFET  
Power MOS 7® is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)  
and Qg. Power MOS 7® combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
TO-258  
D
• Lower Input Capacitance  
• Lower Miller Capacitance  
• Lower Gate Charge, Qg  
• Increased Power Dissipation  
• Easier To Drive  
G
• Hermetic TO-258 Package  
• Military Screening Available  
S
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT8052HLL  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
800  
13  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
52  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
200  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
Watts  
W/°C  
PD  
1.6  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
13  
1
EAR  
EAS  
30  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
1210  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
800  
13  
TYP  
MAX  
UNIT  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
Volts  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, 0.5 ID[Cont.])  
Ohms  
µA  
0.52  
100  
500  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 1mA)  
IGSS  
nA  
±100  
5
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
1234

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