Datasheet > APT1001R6SLL

APT1001R6SLL

更新时间： 2024-01-08 13:29:36

品牌	Logo	应用领域
ADPOW		开关脉冲晶体管
页数	文件大小	规格书
4页	67K
描述
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-2

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技术参数
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APT1001R6SLL 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.64	配置：	Single
最大漏极电流 (Abs) (ID)：	8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	266 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

APT1001R6SLL 数据手册

APT1001R6BLL

APT1001R6SLL

1000V 8A 1.60Ω

BLL

POWER MOS 7 MOSFET

D³PAK

TO-247

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

SLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

MAXIMUMRATINGS

All Ratings: T = 25°C unless otherwise specified.

Symbol

APT1001R6BLL/SLL

UNIT

Parameter

V_DSS

I_D

Drain-Source Voltage

1000

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

266

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

P_D

2.13

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

425

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

UNIT

MIN

1000

TYP

MAX

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 4A)

Ohms

µA

1.60

250

500

±100

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 500V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

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