MICRON TECHNOLOGY (镁光) 更新时间:2024-03-03 10:09:42
Micron(镁光)是美国的半导体巨头。自1978年成立以来,它一直专注于存储芯片的设计和制造。它有自己的晶圆工厂,也是美国唯一的存储芯片制造商。Micron(Micron)的主要产品是DRAM和Flash。Micron(镁光)的市值在全球半导体行业一直保持在第5-第10位,在存储行业一直排名第二。Micron(镁光)在各个国家都有Site,Micron(镁光)有近30个R&D中心和工厂,主要在美国、中国、意大利、日本、新加坡、台湾省、波多黎各、以色列、马来西亚等地。 Micron(镁光)是四大存储巨头中唯一icron(Micron)是唯一一家在上海设立R&D机构的公司。在过去的10年里,上海R&D中心已经独立生产了几代产品,现在最新的3DMemory设计也在上海落户。通过这张简单的图片,我们可以看到美光上海的设计主要分为IC、System和Control设计。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
MTA18ASF2G72HZ-2G6 | MICRON | 获取价格 | ![]() |
双倍数据速率 | 260-Pin DDR4 SODIMM: MTA18ASF2G72HZ – 16GB | |
N25Q512A81GSF40G | MICRON | 获取价格 | ![]() |
512Mb, 1.8V, Multiple I/O Serial Flash Memory | ||
N25Q512A81GSF40F | MICRON | 获取价格 | ![]() |
512Mb, 1.8V, Multiple I/O Serial Flash Memory | ||
N25Q512A11GSF40G | MICRON | 获取价格 | ![]() |
512Mb, 1.8V, Multiple I/O Serial Flash Memory | ||
N25Q512A11GSF40F | MICRON | 获取价格 | ![]() |
512Mb, 1.8V, Multiple I/O Serial Flash Memory | ||
N25Q512A11G1240F | MICRON | 获取价格 | ![]() |
512Mb, 1.8V, Multiple I/O Serial Flash Memory | ||
N25Q512A11G1240E | MICRON | 获取价格 | ![]() |
512Mb, 1.8V, Multiple I/O Serial Flash Memory | ||
M25PE40-VMW6TG | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M25PE40-VMW6G | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M25PE40-VMP6TG | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M25PE40-VMN6TPBA | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M25PE40-VMN6TP | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M25PE40-VMN6P | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M25PE40-VMN3TPB | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE20-VMP6TG | MICRON | 获取价格 | ![]() |
2Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE20-VMP6G | MICRON | 获取价格 | ![]() |
2Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE20-VMN6TP | MICRON | 获取价格 | ![]() |
2Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE20-VMN6P | MICRON | 获取价格 | ![]() |
2Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
MT28GU512AAA2EGC-0AAT | MICRON | 获取价格 | ![]() |
Legacy NOR Flash | ||
MT28GU256AAA2EGC-0AAT | MICRON | 获取价格 | ![]() |
Legacy NOR Flash | ||
MT28GU01GAAA2EGC-0AAT | MICRON | 获取价格 | ![]() |
Legacy NOR Flash | ||
MT29GZ5A5BPGGA-53IT | MICRON | 获取价格 | ![]() |
MT29GZ5A5BPGGA-53IT.87J, MT29GZ5A5BPGGA-046IT.87J | ||
MT29GZ5A5BPGGA-046IT | MICRON | 获取价格 | ![]() |
MT29GZ5A5BPGGA-53IT.87J, MT29GZ5A5BPGGA-046IT.87J | ||
MT28GU512AAA2EGC-0SIT | MICRON | 获取价格 | ![]() |
Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT | ||
MT28GU512AAA1EGC-0SIT | MICRON | 获取价格 | ![]() |
Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT | ||
MT28GU256AAA2EGC-0SIT | MICRON | 获取价格 | ![]() |
Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT | ||
MT28GU256AAA1EGC-0SIT | MICRON | 获取价格 | ![]() |
Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT | ||
MT28GU01GAAA2EGC-0SIT | MICRON | 获取价格 | ![]() |
Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT | ||
MT28GU01GAAA1EGC-0SIT | MICRON | 获取价格 | ![]() |
Data Sheet: Micron StrataFlash Embedded Memory: MT28GU (256Mb, 512Mb, 1Gb) IT | ||
MTC4C10163S1UC48B | MICRON | 获取价格 | ![]() |
动态存储器双倍数据速率 | DDR5 SDRAM UDIMM Addendum: MTC4C10163S1UC – |
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