MICRON TECHNOLOGY (镁光) 更新时间:2024-03-03 10:09:15
Micron(镁光)是美国的半导体巨头。自1978年成立以来,它一直专注于存储芯片的设计和制造。它有自己的晶圆工厂,也是美国唯一的存储芯片制造商。Micron(Micron)的主要产品是DRAM和Flash。Micron(镁光)的市值在全球半导体行业一直保持在第5-第10位,在存储行业一直排名第二。Micron(镁光)在各个国家都有Site,Micron(镁光)有近30个R&D中心和工厂,主要在美国、中国、意大利、日本、新加坡、台湾省、波多黎各、以色列、马来西亚等地。 Micron(镁光)是四大存储巨头中唯一icron(Micron)是唯一一家在上海设立R&D机构的公司。在过去的10年里,上海R&D中心已经独立生产了几代产品,现在最新的3DMemory设计也在上海落户。通过这张简单的图片,我们可以看到美光上海的设计主要分为IC、System和Control设计。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
MT53E512M32D2FW-046 AUT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53E512M32D2FW-046 AIT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53E512M16D1FW-046 AIT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53E512M16D1FW-046 AAT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53D512M32D2DS-046 IT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53D512M16D1DS-046 AIT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53D512M16D1DS-046 AAT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53D1024M32D4DT-046 AUT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT53D1024M32D4DT-046 AAT | MICRON | 获取价格 | ![]() |
MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 | ||
MT48H32M16LFB4-6 IT | MICRON | 获取价格 | ![]() |
动态存储器光电二极管 | LPDRAM | |
MT48H16M32LFB5-6 IT | MICRON | 获取价格 | ![]() |
动态存储器光电二极管 | LPDRAM | |
MT41K256M8DA-125 IT | MICRON | 获取价格 | ![]() |
动态存储器双倍数据速率 | 2Gb: x4, x8, x16 DDR3 SDRAM | |
MT41K256M8DA-107 | MICRON | 获取价格 | ![]() |
动态存储器双倍数据速率 | 2Gb: x4, x8, x16 DDR3 SDRAM | |
MT41K128M16JT-125 IT | MICRON | 获取价格 | ![]() |
动态存储器双倍数据速率 | 2Gb: x4, x8, x16 DDR3 SDRAM | |
MT41J128M16JT-125 | MICRON | 获取价格 | ![]() |
动态存储器双倍数据速率 | 2Gb: x4, x8, x16 DDR3 SDRAM | |
MT41J128M16JT-093 | MICRON | 获取价格 | ![]() |
动态存储器双倍数据速率 | 2Gb: x4, x8, x16 DDR3 SDRAM | |
M45PE40-VMW6TG | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE40-VMW6G | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE40-VMP6TG | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE40-VMP6G | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE40-VMN6TP | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE40-VMN6P | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE40S-VMN6TP | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
M45PE40S-VMN6P | MICRON | 获取价格 | ![]() |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | ||
MT25QL512ABB8ESF-0SIT | MICRON | 获取价格 | ![]() |
MT25Q is a high-performance multiple input/output, 512Mb, 3V, SPI Flash memory device; MT2 | ||
MT25QL512ABB8ESF-0AAT | MICRON | 获取价格 | ![]() |
MT25Q is a high-performance multiple input/output, 512Mb, 3V, SPI Flash memory device; MT2 | ||
MT25QL512ABB8E12-0SIT | MICRON | 获取价格 | ![]() |
MT25Q is a high-performance multiple input/output, 512Mb, 3V, SPI Flash memory device; MT2 | ||
MT25QL512ABB8E12-0AUT | MICRON | 获取价格 | ![]() |
MT25Q is a high-performance multiple input/output, 512Mb, 3V, SPI Flash memory device; MT2 | ||
MT25QL512ABB8E12-0AAT | MICRON | 获取价格 | ![]() |
MT25Q is a high-performance multiple input/output, 512Mb, 3V, SPI Flash memory device; MT2 | ||
MT25QL512ABB1EW9-0SIT | MICRON | 获取价格 | ![]() |
MT25Q is a high-performance multiple input/output, 512Mb, 3V, SPI Flash memory device; MT2 |
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