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M25PE40-VMW6G PDF预览

M25PE40-VMW6G

更新时间: 2024-11-25 15:18:51
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
62页 784K
描述
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripheral Interface, Standard Pinout

M25PE40-VMW6G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliant风险等级:5.7
Is Samacsys:N最大时钟频率 (fCLK):33 MHz
JESD-30 代码:R-PDSO-G8长度:5.3 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260编程电压:2.7 V
认证状态:Not Qualified座面最大高度:2.03 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:5.25 mm
Base Number Matches:1

M25PE40-VMW6G 数据手册

 浏览型号M25PE40-VMW6G的Datasheet PDF文件第2页浏览型号M25PE40-VMW6G的Datasheet PDF文件第3页浏览型号M25PE40-VMW6G的Datasheet PDF文件第4页浏览型号M25PE40-VMW6G的Datasheet PDF文件第5页浏览型号M25PE40-VMW6G的Datasheet PDF文件第6页浏览型号M25PE40-VMW6G的Datasheet PDF文件第7页 
M25PE40 Serial Flash Memory  
Features  
M25PE40 4Mb 3V NOR Serial Flash  
Memory  
Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard  
Pinout  
Features  
• 4Mb of page-erasable Flash memory  
• 2.7V to 3.6V single supply voltage  
• SPI bus-compatible serial interface  
• 75 MHz clock rate (maximum)  
• Page size: 256 bytes  
– Page write in 11ms (TYP)  
– Page program in 0.8ms (TYP)  
– Page erase in 10ms (TYP)  
• Subsector erase: 4KB  
– Sector erase: 64KB  
– Bulk erase: 4Mb  
• Deep power-down mode: 1µA (TYP)  
• Electronic signature  
– JEDEC standard 2-byte signature (8013h)  
• Software write-protection on a 64KB sector basis  
• Hardware write protection of the memory area se-  
lected using the BP0, BP1, and BP2 bits  
• More than 100,000 write cycles  
• More than 20 years of data retention  
• Packages (RoHS compliant)  
– VFQFPN8 (MP) 6mm x 5mm (MLP8)  
– SO8W (MW) 208 mils  
– SO8N (MN) 150 mils  
• Automotive grade parts available  
PDF: 09005aef845660f0  
m25pe40.pdf - Rev. D 1/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2013 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

M25PE40-VMW6G 替代型号

型号 品牌 替代类型 描述 数据表
M25PE40-VMW6TG MICRON

类似代替

4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher
M25PE40-VMW6G NUMONYX

功能相似

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard

与M25PE40-VMW6G相关器件

型号 品牌 获取价格 描述 数据表
M25PE40VMW6P STMICROELECTRONICS

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4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI
M25PE40VMW6P NUMONYX

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EEPROM, 512KX8, Serial, CMOS, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
M25PE40-VMW6P NUMONYX

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4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard
M25PE40-VMW6P STMICROELECTRONICS

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512KX8 FLASH 2.7V PROM, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
M25PE40-VMW6T STMICROELECTRONICS

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512KX8 FLASH 2.7V PROM, PDSO8, 0.208 INCH, PLASTIC, SOP-8
M25PE40VMW6TG NUMONYX

获取价格

EEPROM, 512KX8, Serial, CMOS, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
M25PE40VMW6TG STMICROELECTRONICS

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI
M25PE40-VMW6TG NUMONYX

获取价格

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard
M25PE40-VMW6TG STMICROELECTRONICS

获取价格

512KX8 FLASH 2.7V PROM, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
M25PE40-VMW6TG MICRON

获取价格

4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher