256Mb, 512Mb, 1Gb StrataFlash Memory
Features
Micron StrataFlash Embedded Memory
MT28GU256AAA2EGC-0AAT, MT28GU512AAA2EGC-0AAT,
MT28GU01GAAA2EGC-0AAT
• Power
– Core voltage: 1.7– 2.0V
– I/O voltage: 1.7–2.0V
– Standby current: 60μA (TYP) for 512Mb
– Automatic power savings mode
– 16-word synchronous-burst read current: 23mA
(TYP) @ 108 MHz; 24mA (TYP) @ 133 MHz
• Software
Features
• High-performance read, program, and erase
– 106ns initial read access
– 108 MHz with zero wait-state synchronous burst
reads: 7ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst
reads: 6ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst
reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered programming: 2.0 μs/word (TYP),
512Mb
– Block erase: 0.9s per block (TYP)
– 20μs (TYP) program/erase suspend
• Architecture
– 16-bit wide data bus
– Multilevel cell technology
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended com-
mand set (ECS) compatible
– Common Flash interface (CFI) capable
• Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
– Symmetrically-blocked array architecture
– 256KB erase blocks
• Density and packaging
– 1Gb device: Eight 128Mb partitions
– 512Mb device: Eight 64Mb partitions
– 256Mb device: Eight 32Mb partitions
– Status register for partition/device status
– Blank check feature
– 256Mb, 512Mb, and 1Gb
– Address-data multiplexed interface
– 64-Ball TBGA
• Quality and reliability
– Automotive temperature: –40°C to +105°C (Grade
2 AEC-Q100)
– Minimum 100,000 ERASE cycles per block
– More than 20 years data retention
– 65nm process technology
CCMTD-1725822587-2936
MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
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Products and specifications discussed herein are subject to change by Micron without notice.