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PPHR70L60AE3 PDF预览

PPHR70L60AE3

更新时间: 2024-11-08 20:41:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
1页 59K
描述
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-254, 3 PIN

PPHR70L60AE3 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code:compliant风险等级:5.84
最大集电极电流 (IC):70 A集电极-发射极最大电压:600 V
JESD-30 代码:S-MSFM-P3端子数量:3
封装主体材料:METAL封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管元件材料:SILICON
标称断开时间 (toff):1700 ns标称接通时间 (ton):115 ns
Base Number Matches:1

PPHR70L60AE3 数据手册

  

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