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PN4354 PDF预览

PN4354

更新时间: 2024-11-29 06:04:31
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页数 文件大小 规格书
3页 165K
描述
PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PN4354 数据手册

 浏览型号PN4354的Datasheet PDF文件第2页浏览型号PN4354的Datasheet PDF文件第3页 
Transys  
Electronics  
L
I M I T E D  
PNP SILICON PLANAR EPITAXIAL TRANSISTORS  
PN4354  
PN4355  
PN4356  
TO-92  
Plastic Package  
C
B
E
General Purpose Amplifiers  
DESCRIPTION  
SYMBOL  
4354  
4355  
4356  
UNITS  
VCEO  
VCBO  
VEBO  
IC  
Collector Emitter Voltage  
Collector Base Voltage  
60  
60  
60  
80  
80  
V
V
60  
Emitter Base Voltage  
5
500  
625  
1.0  
V
Collector Current - Continuous  
Power Dissipation@Ta=25°C  
Power Dissipation@ Tc=25°C  
Operating And Storage Junction  
Temperature Range  
mA  
mW  
mW  
°C  
PD  
PD  
Tj, Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
4354  
4355  
4356  
UNITS  
VCEO(sus)* IC=10mA,IB=0 (pulsed)  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
>60  
>60  
>60  
>60  
>5  
>80  
>80  
V
V
VCBO  
VEBO  
ICBO  
IC=10uA,IE=0  
IE=10uA,IC=0  
V
VCB=50V, IE = 0  
Collector-Cut off Current  
<50  
nA  
VcB=50V, IE = 0,  
Ta =75°C  
<5  
uA  
nA  
IEBO  
VBE =4V,IC= 0  
Emitter Cut off Current  
DC Current Gain  
<100  
hFE  
*
VCE=10V,IC=100uA  
VCE=10V,IC=1mA  
VCE=10V,IC=10mA  
>25  
>40  
50-500  
>60  
>75  
100-400  
>25  
>40  
50-250  
VCE=10V,IC=100mA  
VCE=10V,IC=500mA  
>40  
>30  
>75  
>75  
>40  
>30  
Commom Emitter Small  
Signal Current Gain  
l hfe l  
IC=50mA, VCE=10V  
f=100MHz  
1.0-5.0  
1.0 - 1.5  
1.0 - 5.0  
VCE(sat) * IC=150mA,IB=15mA  
IC=500mA,IB=50mA  
Collector Emitter Sat Voltage  
<0.15  
<0.5  
<0.15  
<0.5  
<1.0  
<0.15  
<0.5  
V
V
V
IC=1A,IB=100mA  
PN4355  

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