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PN3640 PDF预览

PN3640

更新时间: 2024-11-12 22:13:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管
页数 文件大小 规格书
2页 100K
描述
PNP Switching Transistor

PN3640 数据手册

 浏览型号PN3640的Datasheet PDF文件第2页 
Discrete POWER & Signal  
Technologies  
PN3640  
MMBT3640  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 2J  
E
PNP Switching Transistor  
This device is designed for very high speed saturate switching at  
collector currents to 100 mA. Sourced from Process 65. See  
PN4258 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
12  
12  
V
V
4.0  
V
Collector Current - Continuous  
200  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN3640  
*MMBT3640  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

PN3640 替代型号

型号 品牌 替代类型 描述 数据表
2N5087G ONSEMI

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