Datasheet > PN2369A_D81Z

PN2369A_D81Z

更新时间： 2024-11-27 05:56:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
14页	749K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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PN2369A_D81Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.92	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	40
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)

PN2369A_D81Z 数据手册

PN2369A

MMBT2369A

TO-92

SOT-23

Mark: 1S

NPN Switching Transistor

This device is designed for high speed saturated switching at collector

currents of 10 mA to 100 mA. Sourced from Process 21.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

4.5

Collector Current - Continuous

200

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN2369A

MMBT2369A*

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

225

1.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...14

中文翻译

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