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PN2369AD75Z PDF预览

PN2369AD75Z

更新时间: 2024-11-26 20:59:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
14页 749K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

PN2369AD75Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.15其他特性:HIGH SPEED SATURATED SWITCHING
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):18 ns
最大开启时间(吨):12 nsBase Number Matches:1

PN2369AD75Z 数据手册

 浏览型号PN2369AD75Z的Datasheet PDF文件第2页浏览型号PN2369AD75Z的Datasheet PDF文件第3页浏览型号PN2369AD75Z的Datasheet PDF文件第4页浏览型号PN2369AD75Z的Datasheet PDF文件第5页浏览型号PN2369AD75Z的Datasheet PDF文件第6页浏览型号PN2369AD75Z的Datasheet PDF文件第7页 
PN2369A  
MMBT2369A  
C
E
TO-92  
C
B
SOT-23  
Mark: 1S  
B
E
NPN Switching Transistor  
This device is designed for high speed saturated switching at collector  
currents of 10 mA to 100 mA. Sourced from Process 21.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
15  
40  
V
V
4.5  
V
Collector Current - Continuous  
200  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN2369A  
MMBT2369A*  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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